國立虎尾科技大學 材料科學與工程系

補助或委託機構

起迄年月

計畫名稱(計畫編號)

108/8/1~109/7/31

全面自阻障銅合金導線與孔隙介電層之材料與製程整合(Ⅱ)－子計畫二 ：全面自阻障電化學原子層沉積銅合金導線與孔隙介電層整合(Ⅱ)(MOST107-2221-E150-002-MY2)

107/8/1~109/7/31

全面自阻障銅合金導線與孔隙介電層之材料與製程整合(Ⅱ)－子計畫二 ：全面自阻障電化學原子層沉積銅合金導線與孔隙介電層整合(Ⅱ)(MOST107-2221-E150-002-MY2)

106/8/1~107/7/31

彩色鉻氮化物太陽熱能吸收體之製備及性能研究(MOST106-2221-E150-053)

106/8/1~107/7/31

全面自阻障銅導線與高孔隙介電層之材料與製程整合－子計畫二：全面自阻障電化學原子層沉積銅導線與高孔隙介電層整合(MOST106-2221-E150-010)

105/8/1~106/7/31

孔隙介電層與超微銅導線新興鑲嵌製程之全程整合研究(II)－子計畫二：孔隙介電層之電化學原子層沉積雙重強化超微銅導線工程(II)(MOST104-2221-E150-005-MY2)

104/8/1~105/7/31

孔隙介電層與超微銅導線新興鑲嵌製程之全程整合研究(II)－子計畫二：孔隙介電層之電化學原子層沉積雙重強化超微銅導線工程(II)(MOST104-2221-E150-005-MY2 )

104/8/1~105/7/31

鋁及矽氮化相對多元鉻氮化物太陽光吸收體之光學性質及熱穩定性的影響(MOST104-2221-E150-066)

103/8/1~104/7/31

孔隙介電層與超微銅導線新興鑲嵌製程之全程整合研究－子計畫二：孔隙介電層之電化學原子層沉積雙重強化超微銅導線工程(MOST103-2221-E150-006)

103/1/1~103/12/31

圖案化矽晶片上製作高效率GaN-based LED(MOST103-2623-E150-002-ET )

102/8/1~103/8/31

鉻及鉻鋁氮化物/氮氧化物高溫太陽光吸收體之製備研究(NSC102-2221-E150-039)

102/8/1~103/7/31

創新性自阻障型電化學析鍍銅/銀合金連導線製程開發(NSC100-2221-E150-033-MY3)

101/8/1~102/7/31

反應磁控濺鍍法製備過渡金屬氮化物-氮氧化物高溫太陽光吸收體之光學性質與熱穩定性探討(NSC101-2221-E150-046 )

國科會

100/8/1~103/7/31

創新型自阻障型電化學析鍍銅/銀合金連導線製程開發 (NSC100-2221-E-150-033-MY3)

國科會

97/8/1~100/7/31

超薄TaSi2Cx擴散阻礙層與銅金屬化製程 (NSC97-2221-E-150-001-MY3)

國科會

96/8/1~97/7/31

CIGS化合物薄膜光伏元件之研製-創新型CIGS光伏元件背面電極研製與整合特性 (NSC96-2221-E-150-034)

國科會

96/5/1~97/4/30

高透光率/高導電度透明導電氧化物薄膜研製 (NSC96-2622-E-150-003-CC3)

國科會

95/8/1~96/7/31

離子束沉積/電漿改質光伏元件透明導電薄膜製程特性(重點研究計畫) (NSC 95-2221-E-150-006)

國科會

94/11/1~95/10/31

離子束濺鍍製備薄膜電晶體同合金薄膜閘極、源/汲極製程 (NSC 94-2622-E-150-029-CC3)

國科會

94/8/1~95/7/31

離子束濺鍍/緻密新穎鉭基非晶質薄膜擴散阻礙特性與銅製程整合 (NSC 94-2216-E-150-004)

國科會

93/11/1~94/10/31

可撓式顯示器技術的新式低溫多晶矽薄膜電晶體製程 (NSC93-2262-E-150-054-CC3)

國科會

93/8/1~94/7/31

高導電性非晶質鉭基擴散阻礙層製備與銅金屬化製程整合 (II) (NSC93-2215-E-150-004)

國科會

92/8/1~93/7/31

高導電性非晶質鉭基擴散阻礙層製備與銅金屬化製程整合 (I) (NSC92-2215-E-150-004)

國科會

91/8/1~92/7/31

無電鍍製備次微米自行對準矽化物與銅製程整合研究 (NSC-91-2215-E-150-001)

國科會

91/1/1~91/7/31

高溫濺鍍現場沈積自行對準矽化物(COSI2與NISI)與銅金屬化製程之整合研究 (NSC90-2215-E-150-001)

45

J.S. Fang^*, W.H. Luo, C.H. Hsu, J.C. Yang, and T.K. Tsai, (2011) “The Transparent Conductive Properties of Manganese-doped Zinc Oxide Films Deposited by Chemical Bath Deposition”, J. Electro. Mater. J. Electro. Mater Vol 41, No 1, 122-129,(SCI)

46

J.S. Fang, J.H. Lin, B.Y. Chen G.S. Chen and T.S. Chin, (2011)”Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects”, J. Electro. Mater. Vol.41, No.1, 138-141 (SCI)

47

T.K. Tsai, S.J. Hsueh, J.H. Lee and J.S. Fang (2011), “Optical Properties and Durability of Al2O3-NiP/Al Solar Absorbers Prepared by Electroless Nickel Composite Plating”, Vol. 41 No. 1 53-59 (SCI)

48

T.K. Tsai, S.S. Wu, C.S. Hsu, J.S. Fang, (2011) “Effect of Phosphorous on the Copper Diffusion Barrier Properties of Electroless CoWP Films”, Thin Solid Films 519 (2011) 4958–4962

49

J. S. Fang,^* J. H. Lin, B. Y. Chen and T. S. Chin, (2011) “Ultrathin Ru-Ta-C Barriers for Cu Metallization” J. Electrochem. Soc. 158 , H97-H102 (SCI)

50

 J. S. Fang,^* J. H. Lin, B. Y. Chen and T. S. Chin, (2010) “Ultrathin Ru-Ta-C Barriers for Cu Metallization” J. Electrochem. Soc. (Accepted)

53

W.H. Luo, T.K. Tsai, J.C.Yang, W.M. Hsieh, C.H. Hsu, and J.S. Fang* (2009),” Enhancement in Conductivity and Transmittance of Zinc Oxide Prepared by Chemical Bath Deposition”, J. Electro. Mater., 38 (11) 2264-2269. (SCI)

54

Jau-Shiung Fang*, Chin-Fu Chiu, Jia-Huei Lin, Ting-Yi Lin, and Tsung-Shune Chin (2009) “Failure Mechanism of 5 nm Thick Ta-Si-C Barrier Layers Against Cu Penetration at 750-800°C” J. Electrochem. Soc. 156 (2) H147-H152. (SCI)

55

L.C. Yang, C.Y. Cheng, and J.S. Fang (2008),”Characterization of polycrystalline CuInSe2 thin films deposited by sputtering and evaporation as a function of composition”, J. Phys. Chem. Solids 69, 435-440 (SCI)

56

C.S. Hsu, H.Y. Hsieh, and J.S. Fang* (2008) “Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films” J. Electro. Mater. 37 (6) 852-859. (SCI)

57

Ting-Yi Lin, Huai-Yu Cheng, Tsung-Shune Chin, Chin-Fu Chiu and Jau-Shiung Fang* (2008) “Highly Thermal-Stable Amorphous TaSi₂C_x Films as Diffusion Barrier” J. Electrochem. Soc. 155 (2) G29-G32. (SCI)

58

 J.S. Fang*, T.P. Hsu, M.L. Ker, H.C. Chen, J.H. Lee, C.S. Hsu, and L.C. Yang, (2008) “Evaluation of properties of Ta-Ni amorphous thin film for copper metallization in integrated circuits” J. Phys. Chem. Solids, 69, 430 – 434. (SCI)

59

T.Y. Lin, H.Y. Cheng, T.S. Chin, C.F. Chiu, and J.S. Fang* (2007) “5-nm-thick TaSiC amorphous films stable up to 750^oC as a diffusion-barrier for copper metallization” Appl. Phys. Lett. 91, 152908. (SCI)

60

J.S. Fang*, M.L. Ker and H.C. Chen, (2007) ”Evaluation of dc-sputtered Glassy Ta-Co-N Thin Film for Copper Metallization” J. Electro. Mater.,36 (11) 1462-1468. (SCI)

61

J.S. Fang*, T.P. Hsu, and H.C. Chen, (2007)” Barrier Properties of Amorphous Binary Ta-Ni Thin Films for Cu Interconnection” J. Electro. Mater. 36 (5) 614-622(SCI).

62

J.S. Fang* and H.Y. Hsieh, (2007)” Structural and passivative behaviors of Cu(In) thin film” J. Electro. Mater. 36 (2) 129-135 (SCI).

63

J.K. Hsiao, M.F. Tai, Y.C. Lee, C.Y. Yang, H.Y. Wang, H.M. Liu, J.S. Fang, and S.T. Chen, (2006) “Labelling of cultured macrophages with novel magnetic nanoparticles” J. Magn. Magn. Mater., 304, c4-c6.(SCI)

64

J.S. Fang*, T.P. Hsu, and G.S. Chen, (2006) “Crystallization and failure behavior of Ta-TM (TM = Fe, Co) nanostructured/amorphous diffusion barriers for copper metallization” J. Electro. Mater., 35 (1) 15-21.(SCI)

65

W.K. Wang, D.S. Wuu, W.C. Shih, J.S. Fang, C.E. Lee, W.Y. Lin, P. Han, R.H. Horng, T.C. Hsu, T.C. Huo, M.J. Jou, A. Lin and Y.H. Yu (2005) “Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Growm on Patterned Sapphire Substrates” J. J. Appl. Phys., 44(4) 2512-2515.(SCI)

66

D.S. Wuu, W.K. Wang, W.C. Shih, R.H. Horng, C.E. Lee, W.Y. Lin, and J.S. Fang (2005)”Enhanced output power of near-ultraviolet InGaN-GaN LEDs frown on patterned sapphire substrates”, IEEE Photon. Technol. Lett., 17(2) 288-290.(SCI)

67

J.S. FANG*, T.P. HSU and G.S. CHEN (2004), “Crystallization and failure behaviors of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization” J. Electro. Mater., 33(10) 1176-1181.(SCI)

68

J.S. Fang, G.S. Chen and Y.W. Lin (2004), “Phase transition behavior of reactive sputtering deposited Co-N thin films using transmission electron microscopy” J. Vac. Sci. Tech. A, 22(3) 698-704(SCI)

69

H.L.Chang, J.S. Fang and C.T. Kuo (2003), “Structures and properties of the crystalline Si-C-N using additional Si-source and Co-catalyst” Review on Advanced Materials Science vol 5, 432-439(SCI)

70

H.L.Chang, J.S. Fang and C.T. Kuo (2003), “Growth model of carbon nanotubes assisted with Co-based catalyst” Review on Advanced Materials Science, vol 5, 425-431(SCIE)

71

J.S Fang*, H.L. Chang, G.S. Chen, and P.Y. Lee (2003), “Crystallization and failure behaviors of Ta-Co nanostructured/amorphous diffusion barriers for copper metallization” Review on Advanced Materials Science, vol 5, 510-513.(SCIE)

72

J. S. Fang*, F.W. Tsai, and T.S. Chin, (2003), “Enhancement of [00l] Texture and Magnetoresistance of Sputtered La-Ca-Mn-O Thin Films on Silicon by Inserting Buffer Layers” Jpn. J. Appl. Phys., 42 1237-1241 (SCI)

73

G.S. Chen, J.J. Gua, C.K. Lin, C.S. Hsu, L.C. Yang, and J.S. Fang, (2002), “Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon” J.Vac. Surf. Tech., A 20(2) 479-485 (SCI)

74

J. S. Fang*, F.W. Tsai, and T.S. chin, (2002), “Highly Textured LaCaMnO Thin Films Grown on SiO/Si(100)”, Jpn. J. Appl. Phys., vol. 41, 600-605 (SCI)

75

J.S. Fang*, C.T. Chang, and T.S. Chin, (2001), “Electric properties of barium-strontium titanate thin films deposited by two-step radio-frequency sputtering”, J. Mater. Res., Vol. 16, No. 9 p.2680-2686. (SCI)

76

J.S. Fang, M.R. Jian, T.S. Chin, H.W. Zhang, B.G. Shen, (2000) “Magnetic Viscosity of NdFe₁₁TiNx Thin Films”, Jpn. J. Appl. Phys., vol. 39, p.496. (SCI)

77

J.C. Shih, T.S. Chin, C.A Chen, and J.S. Fang, (1999), “ The Effect of Beryllium Addition on Magnetostriction of the Tb_0.3Dy_0.7Fe₂ Alloy”, J Mag. and Mag. Mater., vol.191, p.101-106. (SCI)

78

J.S. Fang, T.S. Chin, J.C. Shih, C.A. Chen and S.W. Yung, (1999), \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\" The ac-initial susceptibility as a measure of exchange coupling in two-phase nano-structured NdFeCuNbB magnet alloys, J Mag. and Mag. Mater., vol.195, p.588-594. (SCI)

79

J.S. Fang and T.S. Chin, (1999 ), \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\" High Temperature c_ac Behaviors of Fe-Nd-B Nanocomposite Alloy, J. Journal of Material Science, (SCI)

80

J.S. Fang, M.S. Leu and T.S. Chin, (1998), “AC susceptibility of a two-phase nanocomposite Fe₈₈Nd₆B₆ alloy at 77-990 K”, J. Appl. Phys. Vol.83, p.3731. (SCI)

81

J. S. Fang, M.F. Hsieh, S.K. Chen and T.S. Chin, (1997), “Magnetic properties and structure of Nd-(Fe,B) nanocomposite alloys with fixed Fe/B ratio at 4~14”, J. J. Appl. Phys. vol.36, p.6324. (SCI)

82

T.S. Chin, F.M. Chen and J.S. Fang, (1997), “Magnetostrictive properties of Tb_0.3Dy_0.7(Fe_1-xV_x)₂ alloys”, IEEE Trans. on Magn., vol.33, p.3946. (SCI)

83

J.S. Fang, and T.S. Chin, (1996), “ Rapid thermal annealing of two phases nanocrystalline magnet alloys”, Materials Trans., JIM., vol.37, p.883. (SCI)

84

J.S. Fang, S.K. Chen and T.S. Chin, (1996), “ Nanocrystalline Nd₆Fe_88-xM_xB₆ (M= Ti or V) Magnets by rapid thermal annealing”, IEEE Trans. on Magn., vol.32, p.4401. (SCI) 

85

F.M. Chen, J.S. Fang and T.S. Chin, (1996), ” The effect of carbon on magnetostrictive properties of the Tb_0.3Dy_0.7Fe₂ alloy”, IEEE Trans. on Magn., vol.32, p.4776. (SCI) 

86

J.M. Yao, T.S. Chin, J.S. Fang and S.K. Chen, (1995), “ Magnetic aftereffect and magnetization process of nanocrystalline alpha-Fe/Nd₂Fe₁₄B two-phases magnet alloy”, IEEE Trans. on Magn., vol.31, p.3611. (SCI)

1

J.S. Fang(2019)硫酸銨對電化學共沈積Cu(Mn)合金薄膜之特性,第十一屆海峽兩岸超微顆粒學術研討會(CHN)

2

J.S. Fang(2019)\"2 nm-thick Mn2O3 on nitrogen-stuffed p-SiOCH against Cu diffusion\",15th Coatings Science International 2019(NLD)

3

J.S. Fang(2018)\"Strengthening of porous low-k dielectric by nitrogen stuffing treatment and capping an ultrathin Mn barrier\",ANM 2018(PRT)

4

J.S. Fang(2018)\"Cu film fabrication via pulse underpotential deposition of Pb and surface-limited redox replacement of Cu on trenched Ru/SiO2/Si₂\",ISE 2018(LTU)

5

J.S. Fang(2018)\"Enhancement of Seeding for Electroless Cu Plating of Ta Thin-Film Electrodes by Using Alkyl Self-Assembled Monolayers\",ISE 2018(LTU)

6

J.S. Fang(2017)\"Fabricating high gap-filling Cu films on trenched Ru/p-SiOCH/Si Substrates using pulse Pb-UPDs\",ICASS 2017(CHN)

7

J.S. Fang(2017)\"Comparison of O2 Plasma Treatment on Porous Low Dielectric Constant Material in Sidewall and Bottom of Trench Structure\",ICASS 2017(CHN)

8

J.S. Fang(2017)\"Enhancement of catalyst growth for electroless Cu plating of TaN barrier layer: the role of alkyl self-assembled monolayer\",21st, ISE 2017(HUN)

9

J.S. Fang(2017)\"Sequentially layer-by-layer growth of Ag(Cu) thin film using underpotentially deposition and self-limited redox reaction”\",21th Topical ISE Meeting(HUN)

10

J.S. Fang(2017)\"Pore sealing of porous low-k dielectrics assisted by self-
assembled monolayers by 3-Aminopropyltrimethoxysilane treatment\",21st ISE 2017(HUN)

11

J.S. Fang(2017)\"Ethylenediamine improves layer-by-layer growth of Cu film prepared on cobalt-based substrate via electrochemical atomic layer
deposition\",SurfCoat Korea 2017 conference(KOR)

12

J.S. Fang(2016)\"Sequentially layer-by-layer growth of Cu film on patterned Ru/Si substrate\",Thermec 2016(AUT)

13

J.S. Fang(2015)\"Atomic Layer deposition of Cu and Cu(Ru) layer by electrochemical process\",The Advanced Materials World Congress(SWE)

14

J.S. Fang(2014)\"以電化學原子層沈積Cu-Ru薄膜\",兩岸薄膜科技研討會(CHN)

15

J.S. Fang(2014)\"Layer by layer growth of copper silver film using underpotential deposition by an electrochemical process\",SATF 2014(TUR)

16

J.S. Fang(2014)\"Phase formation and stability of Cu-Ge films with low electrical resistivity\",ThinFilm 2104(CHN)

17

J.S. Fang(2013)\"Thermal stability of Cu3Ge film prepared by magnetron co-sputtering using a copper target and a germanium target\",Thermec 2013(USA)

18

J.S. Fang(2013)\"Properties of co-sputtered AgGe and TaGe thin films\",兩岸工程材料會議(CHN西安)

19

方昭訓(2013)\"Cu(CoN) 與CoN顆粒薄膜應用於銅製程之特性\",第八屆海峽兩岸超微顆粒學術研討會(CHN吉首)

20

J.S. Fang(2013)\"Characteristics of plasma-treated amorphous Ta-Si-C film as a diffusion barrier for copper metallization,TMS 2013(USA)

21

J.S. Fang, Y.C. Lee, (2011) “Fe-Co-B-Nb High Entropy Thin Film for Copper Metallization”, EUROMAT in Montpellier (France)

22

鍾德儒¹ 柏方茹¹ 徐嘉禧¹ 方昭訓 “高能隙低電阻Mg摻雜AZO透明導電薄膜之特性” 第六屆海峽兩岸工程材料研討會, 南京 (2011)

23

Jau-Shiung Fang, Wu-Jia Su, Meng-Shuo Huang, Ting-Yi Lin, Chung-Shiun Chin “Characteristics of amorphous Ta-Si-C film as a diffusion barrier for copper metallization” ICETI 2011, Taipei

24

J.S. Fang* and Y.T. Chen “Passivation of copper-hafnium thin films using self-forming hafnium oxide” TACT 2011, Kenting, Taiwan

25

J.S. Fang^*, W.H. Luo, C.H. Hsu, J.C. Yang, and T.K. Tsai, (2011) “The Transparent Conductive Properties of Manganese-doped Zinc Oxide Films Deposited by Chemical Bath Deposition”, J. Electro. Mater. (Revised)

26

J.S. Fang, J.H. Lin, B.Y. Chen G.S. Chen and T.S. Chin, (2011) “Low-resistivity RuTaC barriers for Cu interconnects”, J. Electro. Mater. (Revised)

27

Jau-Shiung Fang, Chin-Fu Chiu, Ting-Yi Lin, Tsung-Shune Chin (2009)”Highly thermal-stable ultrathin Ta-Si-C amorphous film as a diffusion barrier for Cu interconnection”, THERMEC 2009 in Berlin (Germany)

28

謝維銘  楊仁傑  駱煒翔  徐嘉禧 方昭訓, (2008) “化學鍍浴沉積法製備ZnO薄膜之性質” 兩岸顆粒會議, 上海 (China).

29

J.S. Fang, Y.S. Lin, C.S. Cheng, Y.C. Lee and H.Y. Hsio (2007) “Enhancement of conductivity and transmittance of Al-doped ZnO thin films prepared by a metallic Zn:Al target” EUROMAT2007 in Nuremberg, (Germany).

30

J.S. Fang and H.C. Chen, (2007) “Preparation of the High-Quality Indium Zinc Oxide by Reactive Magnetron Co-sputtering Technique from Indium and Zinc Metallic Targets” TMS in Orlando (USA)

31

J.S. Fang and W.K. Cheng, (2006) “Evaluation of magnetoresistance characteristic of Co-Ti-O granular alloy thin films” Particulogy, Beijing (China).

32

J.S. Fang, T.P. Hsu and L.C. Yang, (2005) “Diffusion Barrier Properties of DC Sputtering Deposited Ta-Ni Films in Cu/SiO₂/Si Contact Schemes”, EUROMAT2005 in Prague (CZ)

33

J.S. Fang, M.L. Ker, and T.P. Hsu, (2005) “Thermal stability enhancement of sputtered Ta-Co-N diffusion barrier layer for copper metallization”, EUROMAT2005 in Prague (CZ)

34

Jau-Shiung Fang and Chen-Siang Hsu, (2005) “Designing experimental determination of sheet resistance of a submicron titanium self-aligned silicide formation”, TMS 2005 in San Francisco (USA)

35

方昭訓, 李安倫, 戴明鳳, (2004) “低溫燃燒合成製備Ni_xZn_1-xFe₂O₄(0.3 ≤ x ≤ 0.8) 鐵氧體粉末與特”,

The Chinese journal of Process Engineering, vol. 4, 212-217.

36

李安倫, 方昭訓, 戴明鳳, (2004) “燃燒法合成鐵鎳合金奈米粉末及包覆金的製程與特性”, The

Chinese journal of Process Engineering, vol. 4, 218-223.

37

 J.S. Fang, F.W. Tsai, and T.S. Chin, (2002) “ Highly [00l] Texture and CMR of Sputtered La-Ca-Mn-O

Thin Films on Silicon with Buffer Layers”, International Magnetism and Magnetic Materials

Conference. Amsterdam (The Netherlands)

38

M.S. Leu, J.S. Fang and T.S. Chin, (2001), “In-Situ Permeability Study of Nano-Crystalline Magnetic Alloys”, Chinese Physics Conference.

39

 J.M. Yao, J.S. Fang and T.S. Chin, (1996), “magnetization Reversal of Ti-modified Nd₂Fe₁₄B/a-Fe

 nanocomposite magnets”, International Conference on Rare Earth Permanent Magnets. p.409.

40

J.S. Fang, T.S. Chin and S.K. Chen, (1996), “Magnetic properties of nanocomposite Fe_88-xM_xNd₆B₆ magnets (M= Zr or Nb) by rapid thermal annealing” International Conference on Rare Earth Permanent Magnetsp.698.

1

方昭訓(2020)\"共濺鍍製備 Cu(Sc)自形成擴散阻障層應用於銅製程之特性研究\",2020 材料年會,新北市

2

方昭訓(2020)\"調控Ru開路電位時間置換低電位沈積Co單層製備CoRu合金薄膜特性\",中國顆粒學會第十一屆學術年會暨海峽兩岸顆粒技術研討會,台北

3

方昭訓(2020)\"電化學共沈積微量摻雜鈷磷合金薄膜於金屬化製程之應用\",TACT 2020,台中

4

方昭訓(2019)\"Cu(Ru) Alloy Thin Films Prepared by Electrochemical Co- deposition\",2019 TACT,Taipei

5

方昭訓(2019)\"Cu(Mn) alloy thin film prepared by using Cu to replace underpotential deposited Mn through surface-limited redox replacement\",2019 TACT,Taipei

6

方昭訓(2019)\"Cu(Nd)自形成阻障層應用於銅連導線之特性\",2019 材料年會,台南

7

方昭訓(2019)\"電化學共沉積製備 Cu(Ru)合金薄膜之特性\",2019 材料年會,台南

8

方昭訓(2018)\"銅離子置換低電位沉積鈷原子層製備銅鈷合金薄膜特性\",2018 材料年會,台中

9

方昭訓(2018)\"電化學共沉積 Cu(Mn)合金薄膜之特性\",2018 材料年會,台中

10

方昭訓(2017)\"Effect of Cleaning solution on Electrical Characteristics and Reliability of Dense and Porous Low Dielectric Constant\",TACT 2017,Hualian

11

方昭訓(2017)\"Use of pulse Pb-UPD to fabricate high gap-filling Cu film on trenched
Ru/SiO2/Si by EC-ALD\",TACT 2017,Hualian

12

方昭訓(2017)\"Effect of O2 Plasma Treatment on Cu Diffusion Characteristics of Porous Low Dielectric Constant Material\",TACT 2017,Hualian

13

方昭訓(2017)\"pH value affecting the growth of copper layer by EC-ALD on Cobalt\",TACT 2017,Hualian

14

方昭訓(2016)\"電化學原子層沉積製備銀銅薄膜之特性探討\",2016 材料年會,HsinChu

15

方昭訓(2016)\"以電化學原子層沉積圖案化 Cu(Mn)薄膜\",2016 材料年會,Hsinchu

16

方昭訓(2015)\"以電化學原子層沉積Cu 薄膜在圖案化基板上的研究\",2015 材料年會,高雄

17

方昭訓(2015)\"Electrical and optical properties of bandgap-enlarged Mg-AZO films\",TACT 2015,Tainan

18

方昭訓(2015)\"Properties of Cu Thin Film on Pattern Substrates by Electrochemical
Atomic Layer Deposition\",兩岸薄膜科技會議,Tainan

19

方昭訓(2014)\"Structural, Electrical, and Resistance Force Characteristics of Ga-In-Sn Eutectic Alloys\",2014 ICETT,NanTou

20

方昭訓(2014)\"以電化學原子層沈積銅薄膜\",第九屆海峽兩岸工程材料研討會,Tainan

21

方昭訓(2014)\"Characteristics of Cu Thin Film prepared by Electrochemical Atomic Layer Deposition\",TACT 2014,Miaoli

22

方昭訓(2014)\"Hydrophobic and oleophobic properties of fluorocarbon films grown with C3F8/C4F8 and C2H2 containing HMDSO/Ar\",VASSCAA-7,Hsinchu

23

方昭訓(2013)\"High hydrophobic fluorocarbon films prepared using C3F8 and C2H2
precursors\",TACT 2013,Taipei

24

方昭訓(2012)\"RuO2擴散阻礙層與同連導線製程特性探討\",材料年會,Huwei

25

方昭訓(2012)\"濺鍍法製備Ag-Ge及Ta-Ge之特性\",TVS-2012,Taichung

26

黃孟碩、王漢瑜、方昭訓 (211) “雙層超薄Ru/Ta-Si-C擴散阻障層與銅連導線製程特性探討” Annual Conference of Taiwan Vacuum Society. Hsinchu, Taiwan

27

蘇武加, 黃孟碩, 邱敬富, 林庭宜, 方昭訓, 金重勳 (2010) “電漿改質Ta-Si-C 薄膜特性與銅製程擴散阻礙層探討” Annual Conference of the Chinese Society for Material Science. 高雄

徐嘉禧, 駱煒翔, 鐘德儒, 方昭訓 (2009) ”探討DMAB濃度對ZnO化學鍍製備薄膜性質” Annual

Conference of the Chinese Society for Material Science.

29

王梓育, 方昭訓 (2009) ”Cu(CoN)合金薄膜之特性研究 ” Annual Conference of the Chinese Society for Material Science.

30

鍾德儒, 柏方茹, 徐嘉禧, 方昭訓 (2009) ”高能隙低電阻Mg 摻雜AZO 透明導電薄膜製備與性質” Annual Conference of the Chinese Society for Material Science.

31

 許銀驛, 柏方茹, 張詩沅, 鄭力綱, 邱敬富, 林庭誼, 方昭訓, 金重勳 (2009) ”5 nm Ta-Si-C薄膜特性與

銅製程整合” Annual Conference of the Chinese Society for Material Science.

32

 陳蓁慧, 洪士育, 林家輝, 方昭訓 (2009) ”超薄Ta-C-N薄膜特性與銅製程整合探討” Annual Conference of the Chinese Society for Material Science.

33

蘇武加, 林家輝, 許銀驛, 黃孟碩, 林庭誼, 方昭訓, 金重勳 (2009) ”電漿表面改質Ta-Si-C 三元合金薄膜之特性探討” Annual Conference of the Chinese Society for Material Science.

34

鄭博元, 許銀驛, 鄭力綱, 蘇武加, 邱敬富, 方昭訓, 金重勳 (2009) ”超薄(Ru-Ta)Si-C非晶質擴散阻障層與銅製程整合特性研究” 熱處理年會

35

陳蓁慧, 洪士育, 邱敬富, 方昭訓 (2009) ”超薄TaCN薄膜阻障層與銅製程整合特性探討” 熱處理年會

36

駱煒翔, 徐嘉禧, 楊仁傑,方昭訓 (2009) ”Mn:ZnO 透明導電氧化物與稀磁半導體薄膜之製備” 熱處理年會

37

 王梓育, 方昭訓 (2009) ”Cu(CoN)合金薄膜特性探討”真空年會

38

陳蓁慧, 洪士育, 邱敬富, 簡竹模, 方昭訓 (2009) ”3 nm Ta-C-N阻障層特性與銅製程整合”真空年會

39

陳佑慈, 周瑋祖, 蘇武加, 方昭訓(2008) ”自我鈍化型銅鉿合金薄膜抗氧化性及電性研究” Annual Conference of the Chinese Society for Material Science.

40

 黃智祥, 李逸群, 許禎祥, 方昭訓(2008) ”共濺鍍製備Cu_1-xHf_x薄膜擴散阻礙特性之研究” Annual Conference of the Chinese Society for Material Science.

41

林家輝, 邱敬富, 周暐祖, 方昭訓 (2008) ”Ru/NiSi/Si應用於銅接觸栓塞擴散阻障層之特性探討” Annual Conference of the Chinese Society for Material Science.

42

謝維銘, 楊仁傑, 駱煒翔, 徐嘉禧, 方昭訓 (2008) ”化學鍍浴沉積法製備ZnO薄膜之性質” Annual Conference of the Chinese Society for Material Science.

43

王梓育, 鍾德儒, 邱敬富, 李景恆, 方昭訓 (2008) ”In:AZO透明導電薄膜之製備與性質” Annual Conference of the Chinese Society for Material Science.

44

周暐祖, 簡竣毅, 許禎祥, 方昭訓(2008) ”自我鈍化型銅鎂合金薄膜電性及結構特性” Annual Conference of the Chinese Society for Material Science.

45

陳蓁慧, 鄭博元, 洪士育, 邱敬富, 林庭誼, 方昭訓, 楊立中, 金重勳(2008) ”Ta-Si-C阻障層特性探討”Annual Conference of the Chinese Society for Material Science.

46

詹媛婷, 張凱嵐, 鄭易承, 王漢瑜, 方昭訓 (2008) ”添加少量鑭元素之銀薄膜特性之研究” Annual Conference of the Chinese Society for Material Science.

47

駱煒翔, 楊仁傑, 謝維銘, 徐嘉禧, 方昭訓 (2008) ”化學鍍浴沉積製備ZnO透明導電薄膜之研製” Annual Meeting of TACT.

48

陳蓁慧, 洪士育, 鄭博元, 鄭力綱, 邱敬富, 林庭誼, 方昭訓, 金重勳 (2008) ”10 nm之Ta-Si-C阻障層特性與銅製程整合探討” Annual Meeting of TACT.

49

廖士運, 劉家瑋, 邱敬富, 方昭訓, 陳伯宜, 楊立中, 蘇孝農, 段安華, 葉冠成(2008) ”超薄AZO阻障層特性探討” Annual Meeting of TACT.

50

鄭博元, 陳蓁慧, 洪士育, 蘇武加, 邱敬富, 林庭誼, 方昭訓, 金重勳(2008) ”超薄Ta-Si-C非晶質薄膜之熱穩定性” Journal of Taiwan Society for Metal Heart Treatment.

51

邱敬富, 林家輝, 林庭誼, 方昭訓, 楊立中, 金重勳 (2007) ”超薄鉭矽化物銅製程阻障層特性探討” Annual Conference of the Chinese Society for Material Science.

52

 陳佑慈,李逸群, 詹媛婷, 方昭訓, 李景恆, 許禎祥(2007) ”自我鈍化型銅鉿合金薄膜抗氧化性及電性研究” Annual Conference of the Chinese Society for Material Science.

53

方昭訓, 陳慧津, 黃智祥, 李景恆, 許禎祥 (2007) ”熱處理對金屬靶製備氧化銦鋅薄膜性質之影響” Annual Conference of the Chinese Society for Material Science.

54

洪伯賢, 王梓育, 王珮茹, 賴麗娟, 邱敬富, 李景恆, 許楨祥, 方昭訓(2007) ”摻雜In之AZO透明導電薄膜性質” Annual Conference of the Chinese Society for Material Science.

55

徐永曄, 謝育倫, 邱敬富, 林家輝, 李景恒, 許禎祥, 方昭訓 (2007) ”微量摻雜鉿之鉭薄膜阻障層特性探討” Annual Conference of the Chinese Society for Material Science.

56

 J.S. Fang, M.L. Ker, H.C. Chen (2006) “Electrical characteristic and microstructure of ternary alloy Ta_xCo_yN_z thin films deposited by reactive sputtering”, Annual Conference of Taiwan Vacuum Society.

57

J.S. Fang,H.Y. Hsieh (2006) “自我鈍化型銅銦合金薄膜之固溶特性及電性之研究” Annual Conference of Taiwan Vacuum Society.

58

 L. -C. Yang, C. Y. Cheng, J. S. Fang, W. Z. Chang , G. S. Chen (2006)” Characterization of polycrystalline CuInSe₂ thin films deposited by sputtering and evaporation as a function of composition” Annual Conference of Taiwan Vacuum Society.

59

方昭訓,賴思宇 (2006) “鈷/氧化鈦顆粒合金多層薄膜的磁阻特性研究” Annual Conference of Taiwan Vacuum Society.

60

J.S. Fang, H. C. Chen (2006)” 氧化銦鋅(IZO)非晶質薄膜擴散阻礙特性與銅製程整合” Annual Conference of Taiwan Vacuum Society.

61

林雍舜, 鄭仲祥, 李逸群, 蕭欣儀, 陳慧津, 李景恆,方昭訓 (2006)”以Zn:Al金屬靶濺鍍沉積製備Al:ZnO薄膜之透明導電膜性質” Annual Conference of the Chinese Society for Material Science.

62

方昭訓, 陳慧津, 黃智祥, 楊立中, 李景恆 (2006)”金屬靶製備氧化銦鋅薄膜性質之影響” Annual Conference of the Chinese Society for Material Science.

63

方昭訓, 柯銘禮, 陳慧津(2006)” 利用Ta-Co-N作為銅製程擴散阻礙層之研究” Annual Conference of the Chinese Society for Material Science.

64

林家輝, 陳枝政, 黃文良, 戴穎蓁, 陳慧津, 方昭訓,李景恆 (2006)”鎳矽化物銅製程阻障層之特性探討” Annual Conference of the Chinese Society for Material Science.

65

紀宗佑, 廖敬期, 陳慧津, 李景恆, 方昭訓 (2006)”離子束濺鍍與磁控濺鍍製備Ta擴散阻礙層與銅製程之特性” Annual Conference of the Chinese Society for Material Scienc.

66

李岳修, 方昭訓, 楊立中(2006)”射頻交流磁控濺鍍ZnO:Al透明導電薄膜之材料特性與研究” Annual Conference of the Chinese Society for Material Science.

67

方昭訓, 賴思宇, 陳佑慈, 李景恆(2006)”不連續Co/TiO2顆粒合金多層薄膜的磁阻特性” Annual Conference of the Chinese Society for Material Science.

68

李彥佑, 陳苡諺,賴思宇,李景恆,方昭訓(2006)”氧化銦絕緣層之製備與穿隧磁阻特性: Annual Conference of the Chinese Society for Material Science.

69

J.S. Fang, M.L. Ker, and T.P. Hsu (2005),” Phase formation and microstructure of amorphous Ta-Co-N thin films on Si substrates”, Annual Conference of the Chinese Society for Material Science.

70

 J.S. Fang, H.Y. Hsieh (2005),” Structural and passivative behaviors of Cu(In) thin film” Annual Conference of the Chinese Society for Material Science.

71

JS. Fang, T.P. Hsu, C.H. Hsu and G.S. Chen, (2004) ” Crystallization and failure behaviors of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization” Annual Conference of the Chinese Society for Material Science.

72

 C.M. Zheng, S.H. Zend, J.Y. Zhang, J.L. Zhang, J.W. Lin, Y.R. Li, T.P. Hsu, C.S. Hsu and J.S. Fang, (2004) “Diffusion barrier characteristics of amorphous Ta50Fe50 thin film prepared by a DC sputtering method”, Annual Conference of the Chinese Society for Material Science.

73

T.H. Hsu, S.C. Zhang, P.J. Chen, B.Y. Chen, T.P. Hsu, C.S. Hsu and J.S. Fang, (2004) “ Diffusion barrier properties of amorphous Ta-Co thin film for copper metalization”, Annual Conference of the Chinese Society for Material Science.

74

方昭訓, 曾王坡, 許藻錶, (2003) “Crystallization and failure behaviors of Ta-Co nanostructured/amorphous diffusion barriers for copper metallization”材料年會論文集.

75

 方昭訓 “Evaluation of Sheet Resistance for 0.30 mm Titanium Self-Aligned Silicide Process by Design of Experimental Method” 材料年會論文集 (2002)

76

方昭訓、嚴楚才、王俊彬、林俊樺、陳錦山, (2001), “高溫現場沉積製作矽化鎳之熱穩定性”, 真空科技年會論文

77

方昭訓、嚴楚才、王俊彬、林俊樺、鍾松畛、徐麒欽、陳錦山, (2001), “高溫現場沉積生成矽化鎳之活化能” 材料年會論文集

78

J.S. Fang, M.F. Ch

1

2

方昭訓、柳璐明 積體電路之自動對準金屬矽化物製程 中華民國專利 發明第126310號。

專利權期間：中華民國九十年一月二十一日至一零八年一月二十五日止。

3

柳璐明、方昭訓 自行對準矽化物製程中增加閘極有效長度的方法 中華民國專利 發明第131956號。

專利權期間：中華民國九十年五月一日至一零八年一月四日止。

4

蔡騰群、方昭訓、柳璐明 防止閘極與源＼汲極橋接之自行對準矽化物製程中華民國專利 發明第123062號。

專利權期間：中華民國八十九年十月二十一日至一零八年七月二日止。

5

方昭訓、謝文益、游萃蓉 形成阻擋層的方法及形成的結構 中華人民共和國專利 ZL 00128530.0。

專利權期間：2006年3月29日至2020年11月22日止。(參考著作附件四十二)

參加國際學術研討會

1

2

2009, TMS in San Francisco, U.S.A.

3

2008, EUROMAT in Nuremberg, Germany.

4

2008, 兩岸顆粒會議，上海，大陸。

5

2007, ANSTO in Sidney, Australlia.

6

2007, TMS in Orlendo, U.S.A.

7

2006, 兩岸顆粒會議，北京，大陸。

8

2005, EUROMAT in Pargue, C.Z.

9

2005, TMS in San Francisco, U.S.A.

10

2004, 兩岸顆粒會議，煙台，大陸。

11

2003, Nano in Crete, Greece.

12

2002, Intermag in Amsterdam, The Neatherland.

13

2000, IITC in San Francisco, U.S.A.

學術榮譽

1

台灣鍍膜年會論文-佳作 (2007) ”超薄鉭矽化物銅製程阻障層特性探討” Annual Meeting of TACT

2

台灣鍍膜年會論文-佳作 (2008) ” 化學鍍浴沉積製備ZnO透明導電薄膜之研製 ” Annual Meeting of TACT

3

台灣熱處理年會論文-第二名 (2008) ”超薄Ta-Si-C非晶質薄膜之熱穩定性” Journal of Taiwan Society for Metal Heart Treatment

4

台灣熱處理年會論文-佳作 (2009) ”超薄(Ru-Ta)Si-C非晶質擴散阻障層與銅製程整合特性研究 ” Journal of Taiwan Society for Metal Heart Treatment.