Department of Materials Science and Engineering, National Formosa University

Major Education:

Ph.D., Department of Materials Science and Engineering, National Taiwan University

Areas of Expertise and Research Fields:

Electron Microscopy, Thin Film Processing, Defect Analysis, Transparent Conductive Thin Films

Relevant Experience:

Structural Analysis Department, Powerchip Semiconductor Manufacturing Corporation 2018/7-2024/1

Chemical Mechanical Polishing Department, Taiwan Semiconductor Manufacturing Company Limited 2015/8-2018/2

1. Y. Chen, P.Y. Chen, S. L. Cheng, B.M. Huang, J.R. Yang, M. Kawasaki, and M. Shiojiri, Structure and electrical property changes of ZnO:Al films, prepared by radio frequency magnetron sputtqering, by thermal annealing, Microsc. Microanal. 21 (Suppl 3) (2015) 1797-1798.
2. Roy, S. Maikap, G. Sreekanth, M. Dutta, D. Jana, Y.Y. Chen, and J.R. Yang, Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure, J. Alloy compd. 637 (2015) 517-523.
3. Jana, S.Maikap, A. Prakash, Y.Y. Chen, H.C. Chiu, and J.R. Yang, Enhanced Resistive switch phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories, Nanoscale Research Letters, 9 (2014) 12-1~8.
4. K. Chiu, C. T. Lee, D. Y. Chiang, W. H. Cho, C. N. Hsiao. Y. Y. Chen, B. M. Huang, and J. R. Yang, Conductive and transparent multilayer films for low-temperature TiO2/Ag/SiO2 electrons by E-beam evaporation with IAD, Nanoscale Research Letters, 9 (2014) 35-1~8.
5. Y. Chen, J.R. Yang, S.L. Cheng, M. Shiojiri, Structural Investigation of ZnO:Al Films Deposited on the Si Substrates by Radio Frequency Magnetron Sputtering, Thin Solid Films 545 (2013) 183-187.
6. Banerjee, S. Maikap, C.S. Lai, Y.Y. Chen, T.C. Tien, H.Y. Lee, W.S. Chen, F.T. Chen, M.J. Tsai, J.R. Yang, Formation Polarity Dependent Improved Resistive Switching Memory Characteristics Using Nanoscale (1.3 nm) Core-shell IrOx Nano-dots, Nanoscale Research Letters, 7 (2012) 194.
7. L. Cheng, Y.Y. Chen, S.W. Lee, H.F. Hsu, Formation of Mg2Ni Alloy Layers and Kinetic Studies in the Binary Mg-Ni System, Thin Solid Films, 517 (2009) 4745-4748.

International Conferences

1. Y. Chen, J.R. Yang, and M. Shiojiri: S Structural investigations of ZnO:Al films deposited by radio frequency magnetron sputtering. the 8th Asian Microscopy Conference and the 32st Microsc. Soc. Thailand Annual Conference, Nakhon Pathom, Thailand, 2015, pp. 5-6.
2. Y. Chen, P.Y. Chen, S.L. Cheng, B.M. Huang, J.R. Yang, M. Kawasaki, and M. Shiojiri: Structural and Electrical Property Changes of ZnO:Al Film, Prepared by Radio Frequency Magnetron Sputtering, by Thermal Annealing. The 18th International Microscopy Congress 2014, Praha, Czech, 2014
3. Y. Chen, T.Y. Wang, H.T. Chang, J.R. Yang, S.W. Lee, and M. Shiojiri: Structural Analysis of Si0.9Ge0.1/Si Epitaxial Layers by Convergent Beam Electron Diffraction. The 1st East-Asia Microscopy Conference (EAMC-1), Chong Qing, China, 2013
4. Y. Chen and S. L. Cheng: Formation and Mg2Ni Alloy Layers and Kinetic Studies in the Binary Mg-Ni System. The 4th International Conference on Technological of Advances of Thin Films and surface coatings, Singapore, 2008

Domestic Conferences

1. Y. Chen, D. Jana, Y.W. Chen, S. Maikap, and J.R. Yang: Electron Beam Induced Curve TiO2 Film during the Observation of Transmission Electron Microscopy. The 3rd International Symposium on Next-Generation Electronics, Tao-Yuan, Taiwan, 2014
2. Y. Chen, T.Y. Wang, H.T. Chang, J.R. Yang, and S.W. Lee: The Critical Thickness Measurement of Strain Relaxation of SiGe Epitaxial Layer by Convergent-beam Electron Diffraction. The 7th International Conference on Advanced Materials Processing 2012 (ICAMP 2012), Taipei, Taiwan, 2012
3. Y. Chen, W. Banerjee, S. Maikap, and J.R. Yang: The Microstructure Investigation of HfO2 Thin Film after Post-annealing. The 12th International Conference in Asia (IUMRS-ICA 2011), Taipei, Taiwan, 2011

Patents

1. I-yen Chen, Specimen Preparation Method and Specimen Preparation System, Republic of China Patent, Certificate No.: I755883