| Name | FANG, JAU-SHIUNG. |
|---|---|
| Job Title | Professor |
| Tel | Office+886-5-631-5010;ResearchOffice+886-5-631-5466 |
| Expertise | Semiconductor Processing, Microelectronic Materials, Flat Panel Display (FPD) Processing, Nanomagnetic Materials, Magnetoresistive Thin Film Materials |
- Experience
- Journal Paper
- Conference Paper
- Project
- Patent
- Technology Transfers
- Thesis Guidance
- Courses
|
Major Education |
Ph.D., Department of Materials Science and Engineering, National Tsing Hua University |
|
Areas of Expertise and Research Fields |
Thin Film Fabrication Technology / Semiconductor Processing / Microelectronic Materials / Flat Panel Display Processing / Thin Film Solar Cell Devices / Optoelectronic Devices / Nanomagnetic Materials / Magnetoresistive Thin Film Materials |
|
Relevant Experience |
Chief Secretary, Secretariat Office, National Formosa University 2023/8-2024/7 Chair, Department of Materials Science and Engineering, National Formosa University 2021/2-2023/7 Visiting Scholar, Department of Electrical Engineering Physics, Tel Aviv University, Israel 2016/7-2016/10 Dean of Academic Affairs, Office of Academic Affairs, National Formosa University 2012/8-2013/7 Dean of Research and Development, Office of Research and Development, National Formosa University 2012/2-2012/7 Director, Research and Development Center, National Formosa University 2010/10-2012/1 Visiting Scholar, Department of Materials Science, University of Cambridge, United Kingdom 2009/8-2010/7 Chair, Department of Materials Science and Engineering, National Formosa University 2004/2-2009/1 Technology Development Department, United Microelectronics Corporation 1997/9–2000/7 |
| Year | Paper Title |
|---|---|
| 2027 | Ultra-trace Sc alloying enables highly thermally stable Cu thin films through interfacial stabilization, Vacuum, pp. 115817-, Jan. 2027 |
| 2026 | Mixed-Potential-Driven Deposition of Cu Films with Dilute Co Incorporation for Enhanced Thermal and Electrical Reliability of Interconnects, Journal of The Electrochemical Society, Jun. 2026 |
| 2026 | Mitigation of electromigration of Co interconnects through bamboo structure formation by miscible Ni incorporation, Thin Solid Films, pp. 140987-, Jun. 2026 |
| 2026 | Ultrathin W2N barrier enabling texture-engineered cobalt interconnects with enhanced electromigration reliability, Journal of Alloys and Compounds, pp. 188282-, Apr. 2026 |
| 2026 | Formation and Thickness-Dependent Resistivity Scaling of C54-TiSi2, CoSi2, and NiSi Thin Films, Journal of Alloys and Compounds, pp. 188222-, Apr. 2026 |
| 2026 | Mechanisms of resistivity minimum for thin cobalt films with enhanced bias-stressing resistance by dilute copper alloying, Materials Chemistry and Physics, pp. 132336-, Mar. 2026 |
| 2026 | Optical properties and thermal stability of colored molybdenum oxide-based spectrally selective absorbers, Solar Energy, pp. 114182-, Jan. 2026 |
| 2025 | Phase-coherent dilute ruthenium-enhanced cobalt films with improved thermal stability and breakdown strength for interconnect metallization, Thin Solid Films, pp. 140729-, Sep. 2025 |
| 2025 | Electrolessly Deposited Co (0.20 at%)-Modified Cu with Greater Thermal- and Electrical Stress-Induced Reliability than Co, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, pp. 082506-, Aug. 2025 |
| 2025 | Influence of trace tungsten contents on thin-film properties and electromigration behaviors of electroless-deposited cobalt interconnect lines, Materials Research Bulletin, pp. 113343-, Feb. 2025 |
| 2025 | The encaging of cobalt interconnect lines with an ordered amino-based self-assembled monolayer for electromigration mitigation using an all-wet electroless process, Thin Solid Films, pp. 140644-, Feb. 2025 |
| 2024 | Integration of Self-Assembled Monolayers for Cobalt/Porous Low-k Interconnects, Coatings, Aug. 2024 |
| 2024 | The feasibility of an ultrathin dual-barrier scheme to inhibit interfacial diffusion and reactions in contact stacks of Co/NiSi/Si, Surfaces and Interfaces, pp. 104703-, Jul. 2024 |
| 2024 | The impact of titanium alloying on altering nanomechanical properties and grain structures of sputter-deposited cobalt for electromigration reliability enhancement, J. Alloys & Compd., pp. 175564-, Jul. 2024 |
| 2024 | Synergistic enhancement of adhesion and electromigration reliability of cobalt via super-diluted (0.06 at.%) tungsten alloying as next-generation interconnect materials, Microelectronic Reliability, pp. 115427-, May. 2024 |
| 2024 | Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology, Solid State Electronics, pp. 108879-, Feb. 2024 |
| 2024 | Ultrasound assistance in the sensitization and activation of porous Al2O3 supports for improving the hydrogen separation of Pd/Al2O3 composite membranes, International Journal of Hydrogen Energy, pp. 1007-1016, Jan. 2024 |
| 2024 | Understanding electromigration failure behaviors of narrow cobalt lines and the mechanism of reliability enhancement for extremely dilute alloying of manganese oxide, Journal of Alloys & Compd., pp. 172591-, Jan. 2024 |
| 2024 | Comparison of barrier efficiency for Self-Assembled Monolayers on SiO2 by using Decyltrimethoxysilane or 3-Minopropyltrimethoxysilane Vapor Treatment, ECS Journal of Solid State Science and Technology, Jan. 2024 |
| 2023 | Comparison of Cobalt Integration with Various Dielectric Materials under Thermal and Electrical Stress, Coatings, pp. 1818-, Oct. 2023 |
| 2023 | Comparison of Precursors for Self-Assembled Monolayers as Cu barriers, ECS J. Soild State Sci. Technol., Jun. 2023 |
| 2023 | Reinforcement in electromigration reliability of Cu interconnects by alloying of extremely dilute MnO, J. Alloys & Comp., pp. 169974-, Apr. 2023 |
| 2023 | Comparison of CoW/SiO2 and CoB/SiO2 Interconnects from the Perspective of Electrical and Reliability Characteristics, Materials, Feb. 2023 |
| 2023 | Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement, Materials Chemistry and Physics, pp. 127222-, Feb. 2023 |
| 2023 | Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials, Molecules, pp. 1134-, Jan. 2023 |
| 2023 | Dual near-zero-thickness sealing for the strengthening of cobalt thin films and nano-lines for future interconnect applications, Applied Surface Science, pp. 155387-, Jan. 2023 |
| 2023 | Dual near-zero-thickness sealing for the strengthening of cobalt thin films and nanolines for future interconnect applications, Applied Surface Science, 2023 |
| 2022 | Enhancement of Electromigration Reliability of Electroless-Plated Nanoscaled Copper Interconnects by Complete Encapsulation of a 1 nm-Thin Self-Assembled Monolayer, Journal of The Electrochemical Society, pp. 082519-, Aug. 2022 |
| 2022 | Comparison of Self-Assembled Monolayers on SiO2 and Porous SiOCH Dielectrics by Decyltrimethoxysilane Vapor Treatment, Coatings, pp. 926-, Jun. 2022 |
| 2022 | Enhancement of breakdown strength and electromigration reliability for cobalt lines lightly doped with boron, Mater. Chem. Phys., pp. 126-136, Apr. 2022 |
| 2022 | Effect of Minor Alloying on Electromigration Reliability of Cobalt Nanowires for Advanced Interconnect Applications: Activation-Energy and Microstructure-Evolution Studies, SSRN, 2022 |
| 2021 | All-wet encapsulation and electroless superfilling process for the fabrication of self- assembled-monolayer encapsulated copper interconnects with enhanced electromigration reliability, Materials Letters, pp. 130718-, Dec. 2021 |
| 2021 | Strengthening the Electromigration Resistance of Nanoscaled Copper Lines by (3-aminopropyl)trimethoxysilane Self-Assembled Monolayer, ECS J. Solid State Science and Technology, pp. 083007-, Oct. 2021 |
| 2021 | Structural models and barrier properties of amine-terminated trialkoxysilane monolayers incubated in nonpolar vs. polar protic solvents, Materials Chemistry and Physics, pp. 125113-, Aug. 2021 |
| 2021 | Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film, ECS JSST, pp. 063005-, Jun. 2021 |
| 2021 | Electrical and Reliability Perspectives for Self-Forming Barrier CuSc Metallization, ECS JSST, pp. 065014-, Jun. 2021 |
| 2021 | Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects, J. Electrochem. Soc., pp. 042505-, Apr. 2021 |
| 2021 | (3-Aminopropyl)trimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization, ECS J. Solid State Sci. Technol., pp. 023003-, Feb. 2021 |
| 2021 | Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloying for metallization of copper without a conventional metallic barrier, Materials Chemistry and Physics, 2021 |
| 2020 | Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments, Langmuir, pp. 15153-15161, Dec. 2020 |
| 2020 | Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloy for metallization of copper without a conventional metallic barrier, Materials Chemistry and Physics, Nov. 2020 |
| 2020 | Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets, Coatings, pp. 708-, Oct. 2020 |
| 2020 | Mechanism of strengthening electroless plated copper films with extremely T dilute oxide dispersion alloying: The optimal MnO addition, Applied Surface Science, pp. 146816-, Oct. 2020 |
| 2020 | Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing, ECS Journal of Solid State Science and Technology , Aug. 2020 |
| 2020 | Effect of Post-annealing on Reliability of Cu/Low-k Interconnects, ECS J. Solid. State Sci. Technol., pp. 054002-, May. 2020 |
| 2020 | Comparison of Cu and Co Integration with Porous Low-k SiOCH Dielectrics, Thin Solid Films, pp. 138010-, Apr. 2020 |
| 2020 | Electrical and Reliability Characteristics of Self- Forming Barrier for CuNd/SiOCH Films in Cu Interconnects, Coatings, pp. 155-, Feb. 2020 |
| 2020 | A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR, Coatings, pp. 164-, Feb. 2020 |
| 2020 | Mechanism of strengthening electroless plated copper films with extremely dilute oxide dispersion alloying: The optimal MnO addition, Applied Surface Science, 2020 |
| 2020 | Editorial: The biennial TACT international thin films conference (TACT 2019), Thin Solid Films, 2020 |
| 2019 | Reliability enhancement of copper/porous SiOCH metallization systems using nitrogen stuffing and bias-filter sputter deposited Mn2O3 barrier, ECS J. Solid State Sci. & Technol., pp. N208-N213-, Dec. 2019 |
| 2019 | Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/ Mn2O3-xN/Cu Integration, Molecules, Oct. 2019 |
| 2019 | Self-strengthening of electroless-plated copper via dual segregation of extremely dilute (0.1%) manganese oxide inclusions, Materials Letter, pp. 126711-, Sep. 2019 |
| 2019 | Role of ethylenediamine additive in Cu growth on a Co/SiO2/Si substrate via electrochemical atomic layer deposition of Pb and its surface limited redox replacement, Appl. Surf. Sci., pp. 280-284, May. 2019 |
| 2019 | Growth of a Cu(Co) film by underpotential deposition of Co and controlling the time of the surface-limited redox replacement of Cu, Int. J. Electrochem. Sci., pp. 5143-5153, May. 2019 |
| 2019 | Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment, Coatings, pp. 246-, Apr. 2019 |
| 2019 | Barrier-Free Process for Fluorinated Silicon Glass Film in Cu Interconnects , Thin Solid Films, pp. 1-7, Apr. 2019 |
| 2018 | A 2-nm-thick Mn Oxide on a Nitrogen-Stuffed Porous Carbon-Doped Organosilica as a Barrier of Cu Films, ECS J. Solid State Science and Technology, pp. N137-N142-, Nov. 2018 |
| 2018 | Electrochemical Growth of Cu(Ru) films via underpotential deposition of Pb, surface-limited redox replacement of Cu, and underpotential deposition of Ru, Journal of Electronic Materials, pp. 5973-5980, Oct. 2018 |
| 2018 | Electrical and Reliability Characteristics of Dielectric Stack with Low Dielectric Constant SiCOH and Capping SiCNH Films, Surface and Coatings Technology, pp. 57-63, Sep. 2018 |
| 2018 | Comparison of O2 plasma treatment on porous low dielectric constant material at sidewall and bottom of trench structure, Thin Soild Films, pp. 808-813, Aug. 2018 |
| 2018 | Comparison of Various Low Dielectric Constant Materials, Thin Solid Films, pp. 871-878, Aug. 2018 |
| 2018 | Influence of trisodium citrate on the Cu electrodeposition by sequential underpotential deposition of Pb and surface-limited redox replacement of Cu, Int. J. Electrochem. Sci., pp. 7466-7477, Jun. 2018 |
| 2018 | A new alternative self-assembled-monolayer activation process for electroless deposition of copper interconnects without a conventional barrier, Electrochemistry Communications, pp. 9-12, Feb. 2018 |
| 2017 | Effects of Additives on Electrochemical Growth of Cu Film on Co/SiO2/Si Substrate by Alternating Underpotential Deposition of Pb and Surface-Limited Redox Replacement by Cu, J. Electro. Mater., pp. 6677-6684, Aug. 2017 |
| 2017 | Cu-induced Dielectric Breakdown of Porous Low Dielectric Constant Film, J. Electronic Materials, pp. 3627-3633, Feb. 2017 |
| 2017 | Enhancement of seeding for electroless Cu plating of metallic barrier layers by using alkyl self-assembled monolayers, Applied Surface Science, pp. 350-358, Feb. 2017 |
| 2017 | Cu-Induced Dielectric Breakdown of Porous Low-Dielectric-Constant Film, Journal of Electronic Materials, pp. 3627-3633, 2017 |
| 2016 | Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition, Applied Surface Science, pp. 358-364, Dec. 2016 |
| 2016 | Enhancement of Seeding and Electroless Cu Plating on TaN Barrier Layers: The Role of Plasma Functionalized Self-Assembled Monolayers, Journal of The Electrochemical Society, pp. D463-D468-, Sep. 2016 |
| 2016 | Effect of Annealing Temperature on Electrical and Reliability Characteristics of HfO2/Porous Low-k Dielectric Stacks, Microelectronic Engineering, pp. 34-39, Aug. 2016 |
| 2016 | Direct, sequential growth of copper film on TaN/Ta barrier substrates by alternation of Pb-UPD and Cu-SLRR, Electrochimica Acta, pp. 45-51, Apr. 2016 |
| 2016 | P-type highly conductive and transparent NdF3-doped tin oxide films prepared by dip coating, Thin Solid Films, Mar. 2016 |
| 2016 | Optical Properties and Boron Doping-Induced Conduction-Type Change in SnO2 Thin Films, Journal of Electronic Materials, pp. 349-356, Jan. 2016 |
| 2016 | Effect of Cu drift on dielectric breakdown for porous low dielectric constant film under static and dynamic stress, ECS Transactions, pp. 241-252, 2016 |
| 2015 | Surface morphologies induced hydrophobicity of fluorocarbon films grown by a simultaneous etching and deposition process, Journal of Electronic Materials, pp. 2908-2914, Aug. 2015 |
| 2015 | Structural, Electrical, and Resistance Force Characteristics of Ga-In-Sn Eutectic Alloys, Key Engineering Materials, pp. 162-167, Apr. 2015 |
| 2015 | Atomic layer deposition of copper and copper silver films using an electrochemical process, Thin Solid Films, pp. 1-5, Mar. 2015 |
| 2015 | Atomic Layer Deposition HfO2 Capping Layer Effect on Porous Low Dielectric Constant Materials, Applied Surface Science, pp. 115-119, Mar. 2015 |
| 2015 | Properties of fluorine-doped SnO thin films by a green sol-gel method, Materials Science in Semiconductor Processing, pp. 664-669, Feb. 2015 |
| 2015 | Phase formation and stability of Cu-Ge films with low electrical resistivity, Thin Solid Films, pp. 228-231, Feb. 2015 |
| 2015 | Surface-Morphology-Induced Hydrophobicity of Fluorocarbon Films Grown by a Simultaneous Etching and Deposition Process, Journal of Electronic Materials, pp. 2908-2914, 2015 |
| 2015 | Properties of fluorine-doped SnO2 thin films by a green sol-gel method, Materials Science in Semiconductor Processing, pp. 664-669, 2015 |
| 2014 | Low resistivity Fe–Co–B–Ti–Nb amorphous thin film as a copper barrier, Journal of Alloys and Compounds, pp. S348–S352-, Feb. 2014 |
| 2014 | Optical Properties of AlxOy/Ni/AlxOy Multilayered Absorber Coatings Prepared by Reactive DC Magnetron Sputteri, Journal of Electronic Materials, pp. 229-235, Jan. 2014 |
| 2014 | Characteristics of plasma-treated amorphous Ta-Si-C film as a diffusion barrier for copper metallization, Journal of Electronic Materials, pp. 212-218, Jan. 2014 |
| 2014 | Low resistivity Fe-Co-B-Ti-Nb amorphous thin film as a copper barrier, Journal of Alloys and Compounds, pp. S348-S352-, 2014 |
| 2013 | Passivation of copper-hafnium thin films using self-forming hafnium oxide, Surf. Coating & Technol., Sep. 2013 |
| 2012 | Optical Properties and Durability of Al2O3-NiP/Al Solar Absorbers Prepared by Electroless Nickel Composite Plating , Journal of Electronic Materials, pp. 53-59, Nov. 2012 |
| 2011 | The Transparent Conductive Properties of Manganese-doped Zinc Oxide Films Deposited by Chemical Bath Deposition, J. Electro. Mater., pp. 122-129, Nov. 2011 |
| 2011 | Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects, J. Electro. Mater., pp. 138-141, Nov. 2011 |
| 2011 | Optical Properties and Durability of Al2O3-NiP/Al Solar Absorbers Prepared by Electroless Nickel Composite Plating, J. Electro. Mater., pp. 53-59, Nov. 2011 |
| 2011 | Effect of Phosphorous on the Copper Diffusion Barrier Properties of Electroless CoWP Films, Thin Solid Films, pp. pp. 4958–4962-, Aug. 2011 |
| 2011 | Ultrathin Ru-Ta-C Barriers for Cu Metallization, J. Electrochem. Soc., pp. PP. H97-H102-, May. 2011 |
| 2010 | Highly conductive Indium Zinc Oxide Prepared by Reactive Magnetron Co-sputtering Technique using Indium and Zinc Metallic Targets, J. Vac. Sci. Technol, pp. 425-430, Feb. 2010 |
| 2009 | Enhancement in Conductivity and Transmittance of Zinc Oxide Prepared by Chemical Bath Deposition, J. Electro. Mater., pp. 2264-2269, Nov. 2009 |
| 2009 | Fifteen-Nanometer Ru Diffusion Barrier on NiSi/Si for a sub-45 nm Cu Contact Plug, J. Electro. Mater., pp. 2251-2256, Nov. 2009 |
| 2009 | Failure Mechanism of 5 nm Thick Ta-Si-C Barrier Layers Against Cu Penetration at 750-800°C, J. Electrochem. Soc., pp. H147-H152-, Jan. 2009 |
| 2008 | Characterization of polycrystalline CuInSe2 thin films deposited by sputtering and evaporation as a function of composition, J. Phys. Chem. Solids , pp. 435-440, Nov. 2008 |
| 2008 | Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films, J. Electro. Mater., pp. 852-859, Jun. 2008 |
| 2008 | Evaluation of properties of Ta-Ni amorphous thin film for copper metallization in integrated circuits, J. Phys. Chem. Solids, pp. 430 – 434-, Feb. 2008 |
| 2008 | Highly Thermal-Stable Amorphous TaSi2Cx Films as Diffusion Barrier, J. ElectroChem. Soc., pp. G29-G32-, Feb. 2008 |
| 2007 | 5-nm-thick TaSiC amorphous films stable up to 750oC as a diffusion-barrier for copper metallization, Applied Physics Letter, pp. 152908-, Nov. 2007 |
| 2007 | Barrier Properties of Amorphous Binary Ta-Ni Thin Films for Cu Interconnection, J. Electro. Mater, pp. 614-622, May. 2007 |
| 2007 | Structural and passivative behaviors of Cu(In) thin film, J. Electro. Mater., pp. 129-135, Feb. 2007 |
| 2007 | Evaluation of dc-sputtered Glassy Ta-Co-N Thin Film for Copper Metallization, J. Electro. Mater, pp. 1462-1468, Feb. 2007 |
| 2006 | Labelling of cultured macrophages with novel magnetic nanoparticles, J. Magn. Magn. Mater., pp. c4-c6-, Jan. 2006 |
| 2006 | Crystallization and failure behavior of Ta-TM (TM = Fe, Co) nanostructured/amorphous diffusion barriers for copper metallization, J. Elec. Mater, pp. 15-21, Jan. 2006 |
| 2005 | Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Growm on Patterned Sapphire Substrates, J. J. Appl. Phys, pp. 2512-2515, Apr. 2005 |
| 2005 | Ehanced output power of near-ultraviolet InGaN-GaN LEDs frown on patterned sapphire substrates, IEEE Photon. Technol. Lett., pp. 288-290, Feb. 2005 |
| 2004 | Phase transition behavior of reactive sputtering deposited Co-N thin films using transmission electron microscopy, J. Vac. Sci. Tech.A, pp. 698-704, Oct. 2004 |
| 2004 | Crystallization and failure behaviors of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization, Journal of Electronic Materials, pp. 1176-1181, Oct. 2004 |
| 2003 | Growth model of carbon nanotubes assisted with Co-based catalyst, Review on Advanced Materials, pp. 425-431, Aug. 2003 |
| 2003 | Structures and properties of the crystalline Si-C-N using additional Si-source and Co-catalys, Review on Advanced Materials, pp. 432-439, Aug. 2003 |
| 2003 | Crystallization and failure behaviors of Ta-Co nanostructured/amorphous diffusion barriers for copper metallization, Review on Advanced Materials, pp. 510-513, Aug. 2003 |
| 2003 | Enhancement of [00l] Texture and Magnetoresistance of Sputtered La-Ca-Mn-O Thin Films on Silicon by Inserting Buffer Layers, Jpn. J. Appl. Phys, pp. 1237-1241, Aug. 2003 |
| 2002 | Highly Textured LaCaMnO Thin Films Grown on SiO/Si(100), Jpn. J. Appl. Phys., pp. 600-605, Jun. 2002 |
| 2002 | Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon , J.Vac. Surf. Tech., A , pp. 479-485, Feb. 2002 |
| 2001 | , (2001), “Electric properties of barium-strontium titanate thin films deposited by two-step radio-frequency sputtering”, J. Mater. Res., pp. 2680-2686, Sep. 2001 |
| 2000 | Magnetic Viscosity of NdFe11TiNx Thin Films, Jpn. J. Appl. Phys., pp. P496-, Mar. 2000 |
| 2000 | The Effect of Beryllium Addition on Magnetostriction of the Tb0.3Dy0.7Fe2 Alloy, J Mag. and Mag. Mater., pp. 101-106, Jan. 2000 |
| Year | Paper Title |
|---|---|
| 2025 | Zi-Yi Ye (葉咨儀), Zhi-Yu Lin (林峙妤), Jia-Ni Chen (陳佳妮), Yu-Hong Yao (姚昱宏), Jau-Shiung Fang* (方昭訓), Thermal and Electrical Properties of Dilute Ag-Incorporated Co Immiscible Alloy Films for Interconnect in Microelectronic Devices, MRS-T Annual Meeting 2025, Nov. 15, 2025, TWN臺灣 |
| 2025 | 黃意儒、方昭訓, Properties of Ni-W Thin Films Prepared by Magnetron Sputtering, MRS-T Annual Meeting 2025, Nov. 15, 2025, TWN臺灣 |
| 2025 | Structure and resistivity size effect of sputter-deposited TiSi2, CoSi2, and NiSi, TACT 2025, Oct. 26-29, 2025, TWN臺灣 |
| 2025 | Structural Evolution and Electrical Properties of Lightly Doped Co–Cu Alloy Films Deposited by EC-ALD, TACT 2025, Oct. 26-29, 2025, TWN臺灣 |
| 2025 | 黃士沅 、李振潁 、廖強祐 、方昭訓, 少量鉬摻雜固熔型之鈷合金薄膜應用於連導線製程, 2025年會員大會暨論文研討會, Oct. 01, 2025, TWN臺灣 |
| 2025 | J.S. Fang, S.T. Fang, Y.J. Cheng, G.S. Chen, Electrical and Corrosion Characteristics of Co-Ru Alloy Thin Films Prepared by Co-sputtering for Next Generation Interconnects, ACEX 2025, Jun. 30-Jul. 04, 2025, ITA義大利 |
| 2024 | 方昭訓, 製程溫度對CoRu合金薄膜應用於中段連導線製程之特性, 113材料年會, Nov. 15-16, 2024, TWN臺灣 |
| 2024 | 方昭訓, 低電位沉積鈷釕合金薄膜在TiSi2基板之特性分析, 113材料年會, Nov. 15-16, 2024, TWN臺灣 |
| 2024 | 探討釕基板加熱與阻障層對RuAl薄膜特性, 2024 TACT, Oct. 04-05, 2024, TWN臺灣 |
| 2024 | 少量鎳摻雜之固溶型鈷合金應用於連導線製程, 2024 TACT, Oct. 04-05, 2024, TWN臺灣 |
| 2024 | Jau-Shiung Fang, Characterization of Co(Ru) thin film deposited by underpotential deposition of Co and surface-limited redox replacement of Ru, ICMSN, Jul. 05-08, 2024, GBR英國 |
| 2023 | Jau-Shiung Fang, Characteristics of Al-Sc Intermetallic Compounds for next generation interconnects, MRSTIC, Nov. 17-20, 2023, TWN臺灣 |
| 2023 | Jau-Shiung Fang, Properties of Ru-Al intermetallic compounds deposited by magnetron co-sputtering, MRSTIC 2023, Nov. 17-20, 2023, TWN臺灣 |
| 2023 | Jau-Shiung Fang, Characteristics of Al-based intermetallic compounds as a next-generation interconnect material, TACT 2023, Nov. 12-15, 2023, TWN臺灣 |
| 2023 | Jau-Shiung Fang, Corrosion behavior of Co-Ru Alloy Thin Films Prepared by Electrochemical Co- deposition on TiSi2, TACT 2023, Nov. 12-15, 2023, TWN臺灣 |
| 2023 | Jau-Shiung Fang, Strengthening corrosion behavior of cobalt and ruthenium alloy films in an acidic electrolyte for nanoscale interconnec, Thermec 2023, Jul. 02-07, 2023, AUT奧地利 |
| 2023 | Jau-Shiung Fang, Yao-Wen Chang, Yin-Chi Kuo, Designing Experimental Determination of Sheet Resistance of a Titanium Self-Aligned Silicide Formation., ICMCTF 2023, May. 19-24, 2023, USA美國 |
| 2022 | 石胥昌、林怡吟、盧婉惠、史曉婕、張耀文、方昭訓, 共濺鍍製備Al-Sc介金屬化合物薄膜製程之特性研究, 2022材料年會, Nov. 18-19, 2022, TWN臺灣 |
| 2022 | 謝宜潔、方姝茵、艾誌宸、張簡又維、方少彤 、方昭訓, 磁控共濺鍍沈積Ru-Al借金屬化合物之特性, 2022材料年會, Nov. 18-19, 2022, TWN臺灣 |
| 2022 | 方昭訓 等, 調控低電位沉積層狀製備下世代Co(Ru)合金連導線薄膜, TACT, Nov. 04-05, 2022, TWN臺灣 |
| 2022 | 廖泳棋、方少彤、郭映琦、方昭訓, 電化學沉積微量摻雜 Co(P)合金薄膜之結構, 2022 ＴＡＣＴ, Nov. 04-05, 2022, TWN臺灣 |
| 2021 | Jau-Shiung Fang, Crystalline and electrical properties of phosphorous lightly-doped Co alloy films electrochemically deposited on Ni substrate for nanoscale interconnects, TACT 2021, Nov. 15-18, 2021, TWN中華民國(臺灣) |
| 2021 | W.Z. Lu, Q.H. Lin, J.N. Zhan, Z.W. Gu, Y.N. Lin, J.S. Fang, Structural Change and Stress Variation of self-forming Cu(Sc) Films as an Interconnecting Material, MRSTIC 2021, Nov. 13-17, 2021, TWN中華民國(臺灣) |
| 2021 | B.S. Wong, J.W. He, Z. Han, U.K. Lin, J.S. Fang, Improvement of electromigration reliability using a Sc-doped copper interconnects , MRSTIC 2021, Nov. 13-17, 2021, TWN中華民國(臺灣) |
| 2021 | Nucleation Mechanism of Lightly-doped Co(C) Alloy Films Electrochemically Deposited by Mixing Co Electrolyte and Graphene, MRSTIC 2021, Nov. 13-17, 2021, TWN中華民國(臺灣) |
| 2020 | 黃重誠、陳鈞煜、廖泳棋、方昭訓, 表面侷限氧化還原Ru置換低電位沉積Co單層製備CoRu合金薄膜特性, 中國機械學會年會, Nov. 20-21, 2020, TWN中華民國(臺灣) |
| 2020 | 方昭訓 吳昱霖 郭映琦, 電化學沈積製備之鈷薄膜應用於高深寬比洞柱塞之研究, 2020 材料年會, Nov. 06-07, 2020, TWN中華民國(臺灣) |
| 2020 | 何瑀璇 林美均 張耀文 林映甯 方昭訓, 共濺鍍製備 Cu(Sc)自形成擴散阻障層應用於銅製程之特性研究, 2020 材料年會, Nov. 06-07, 2020, TWN中華民國(臺灣) |
| 2020 | 方昭訓 黃重誠, 調控Ru開路電位時間置換低電位沈積Co單層製備CoRu合金薄膜特性, 中國顆粒學會第十一屆學術年會暨海峽兩岸顆粒技術研討會, Oct. 24, 2020, TWN中華民國(臺灣) |
| 2020 | 陳坤煌 施奕廷 陳鈞煜 吳昱霖 方昭訓, 電化學共沈積微量摻雜鈷磷合金薄膜於金屬化製程之應用, TACT 2020, Oct. 23, 2020, TWN中華民國(臺灣) |
| 2019 | Jau-Shiung Fang, Yu-Fei Sie, Chung-Cheng Huang, Ying-Ning Lin, Cu(Mn) alloy thin film prepared by using Cu to replace underpotential deposited Mn through surface-limited redox replacement, 2019 TACT, Nov. 16-19, 2019, TWN中華民國(臺灣) |
| 2019 | Jau-Shiung Fang, Yu-Ze Chen, Cu(Ru) Alloy Thin Films Prepared by Electrochemical Co- deposition, 2019 TACT, Nov. 16-19, 2019, TWN中華民國(臺灣) |
| 2019 | 方昭訓 陳育澤 吳昱霖 黃重誠 林映甯 施凡梧, 電化學共沉積製備 Cu(Ru)合金薄膜之特性, 2019 材料年會, Nov. 15-16, 2019, TWN中華民國(臺灣) |
| 2019 | 陳彥達 林紘煬 劉冠廷 盧暘昇 林映甯 黃重誠 吳昱霖 方昭訓, Cu(Nd)自形成阻障層應用於銅連導線之特性, 2019材料年會, Nov. 15-16, 2019, TWN中華民國(臺灣) |
| 2019 | 許鎮獻，王宣閔，方昭訓, 硫酸銨對電化學共沈積Cu(Mn)合金薄膜之特性, 第十一屆海峽兩岸超微顆粒學術研討會, Aug. 16-19, 2019, CHN大陸地區(大陸) |
| 2019 | J.S. Fang, K.Y. Yu, Y.S. Wang, G.S. Chen, Y.L Cheng, 2 nm-thick Mn2O3 on nitrogen-stuffed p-SiOCH against Cu diffusion, 15th Coatings Science International 2019, Jun. 24-28, 2019, NLD荷蘭王國(荷蘭) |
| 2018 | 方昭訓 王宣閔 陳育澤 謝于飛 陳錦山 鄭義榮, 銅離子置換低電位沉積鈷原子層製備銅鈷合金薄膜特性, 2018 材料年會, Nov. 17, 2018, TWN中華民國(臺灣) |
| 2018 | 方昭訓 許鎭獻 陳育澤 謝于飛 陳錦山 鄭義榮, 電化學共沉積 Cu(Mn)合金薄膜之特性, 2018 材料年會, Nov. 16-17, 2018, TWN中華民國(臺灣) |
| 2018 | J.S. Fang, C.Y. Wong, G.S. Chen, Y.L. Cheng, Strengthening of porous low-k dielectric by nitrogen stuffing treatment and capping an ultrathin Mn barrier, ANM 2018, Jul. 18-Sep. 20, 2018, PRT葡萄牙共和國 |
| 2018 | G.S. Chen, Y.L. Cheng, J.S. Fang, Enhancement of Seeding for Electroless Cu Plating of Ta Thin-Film Electrodes by Using Alkyl Self-Assembled Monolayers , ISE 2018, May. 08-11, 2018, LTU立陶宛共和國(立陶宛) |
| 2018 | J.S. Fang, J.Y. Wong, S.M. Wang, C.H. Hsu, Y.L. Cheng, G.S. Chen, Cu film fabrication via pulse underpotential deposition of Pb and surface-limited redox replacement of Cu on trenched Ru/SiO2/Si₂, ISE 2018, May. 08-11, 2018, LTU立陶宛共和國(立陶宛) |
| 2017 | Jhih-Yan Wong, Syuan-Min Wang, Chen-Hsien Hsu, Jau-Shiung Fang, Use of pulse Pb-UPD to fabricate high gap-filling Cu film on trenched Ru/SiO2/Si by EC-ALD, TACT 2017, Oct. 15-18, 2017, TWN中華民國(臺灣) |
| 2017 | Yao-Cia Chuang, Chih-Yen Lee, Wei-Jie Hung, Giin-Shan Chen, Jau-Shiung Fang,and Yi-Lung Cheng, Effect of O2 Plasma Treatment on Cu Diffusion Characteristics of Porous Low Dielectric Constant Material, TACT 2017, Oct. 15-18, 2017, TWN中華民國(臺灣) |
| 2017 | Chih-Yen Lee, Chi-Jia Huang, Wei-jie Hung, Yao-Cia Chuang, Giin-Shan Chen, Jau-Shiung Fang,and Yi-Lung Cheng, Effect of Cleaning solution on Electrical Characteristics and Reliability of Dense and Porous Low Dielectric Constant, TACT 2017, Oct. 15-18, 2017, TWN中華民國(臺灣) |
| 2017 | Jai-Ling Wu, Syuan-Min Wang, Chen-Hsien Hsu, Jau-Shiung Fang, pH value affecting the growth of copper layer by EC-ALD on Cobalt, TACT 2017, Oct. 15-18, 2017, TWN中華民國(臺灣) |
| 2017 | Y.L. Cheng, B.H. Lin, C.Y. Lee, G.S. Chen, J.S. Fang, Comparison of O2 Plasma Treatment on Porous Low Dielectric Constant Material in Sidewall and Bottom of Trench Structure, ICASS 2017, Jun. 12-15, 2017, CHN大陸地區(大陸) |
| 2017 | J.S. Fanga, J.Y. Wong, Y.L. Cheng, G.S. Chen, Fabricating high gap-filling Cu films on trenched Ru/p-SiOCH/Si Substrates using pulse Pb-UPDs, ICASS 2017, Jun. 12-15, 2017, CHN大陸地區(大陸) |
| 2017 | Yi-Lung Cheng, Giin-Shan Chen, Jau-Shiung Fang, Chiao-Wei Haung, Chih-Yen Lee, Wen-Hsi Lee, Chung-Ren Sun, Pore sealing of porous low-k dielectrics assisted by self-assembled monolayers by 3-Aminopropyltrimethoxysilane treatment , 21st ISE 2017, Apr. 23-26, 2017, HUN匈牙利 |
| 2017 | G.S. Chen, Y.L. Cheng, J.S. Fang, D.Y. Wu, T.M. Yang, Enhancement of catalyst growth for electroless Cu plating of TaN barrier layer: the role of alkyl self-assembled monolayer, 21st, ISE 2017, Apr. 23-26, 2017, HUN匈牙利 |
| 2017 | J.S. Fang, J.H. Huang, G.S. Chen, Y.L. Cheng, Sequentially layer-by-layer growth of Ag(Cu) thin film using underpotentially deposition and self-limited redox reaction, 21th Topical ISE Meeting , Apr. 23-26, 2017, HUN匈牙利 |
| 2017 | J.L. Wu, J.S. Fang, Ethylenediamine improves layer-by-layer growth of Cu film prepared on cobalt-based substrate via electrochemical atomic layer deposition, SurfCoat Korea 2017 conference, Mar. 29-31, 2017, KOR大韓民國(南韓) |
| 2016 | 方昭訓，徐瑋志，吳佳玲, 以電化學原子層沉積圖案化 Cu(Mn) 薄膜, 2016 材料年會, Nov. 19-20, 2016, TWN中華民國(臺灣) |
| 2016 | 方昭訓，黃家宏，吳佳玲, 電化學原子層沉積製備銀銅薄膜之特性探討, 2016 材料年會, Nov. 19-20, 2016, TWN中華民國(臺灣) |
| 2016 | J.S. Fang, G.R. Su, G.S. Chen, Y.L. Cheng, T.S. Chin, Sequentially layer-by-layer growth of Cu film on patterned Ru/Si substrate, Thermec 2016, May. 29-Jun. 03, 2016, AUT奧地利共和國 |
| 2015 | 方昭訓,蘇冠儒,林隆奕, 以電化學原子層沉積Cu 薄膜在圖案化基板上的研究, 2015 材料年會, Nov. 20-21, 2015, TWN中華民國(臺灣) |
| 2015 | J.S. Fanga*, D.R. Jung, F.J. Po, C.H. Hsu, T.S. Chin, Electrical and optical properties of bandgap-enlarged Mg-AZO films, TACT 2015, Nov. 15-18, 2015, TWN中華民國(臺灣) |
| 2015 | J.S. Fang, G.R. Su, Properties of Cu Thin Film on Pattern Substrates by Electrochemical Atomic Layer Deposition , 兩岸薄膜科技會議, Nov. 15-18, 2015, TWN中華民國(臺灣) |
| 2015 | J.S. Fang, M.Y. Hsu, G.S. Chen, T.S. Chin, Atomic Layer deposition of Cu and Cu(Ru) layer by electrochemical process, The Advanced Materials World Congress (AMWC), Aug. 23-26, 2015, SWE瑞典王國(瑞典) |
| 2014 | Y.F. Shen, C.C. Wen, J.S. Fang, J.H. Horng, Structural, Electrical, and Resistance Force Characteristics of Ga-In-Sn Eutectic Alloys, 2014 ICETT, Nov. 21-23, 2014, TWN中華民國(臺灣) |
| 2014 | J.S. Fang, 以電化學原子層沈積銅薄膜, 第九屆海峽兩岸工程材料研討會, Nov. 07-08, 2014, TWN中華民國(臺灣) |
| 2014 | J.S. Fang, M.Y. Hsu, 以電化學原子層沈積Cu-Ru薄膜, 兩岸薄膜科技研討會, Oct. 30-31, 2014, CHN大陸地區(大陸) |
| 2014 | Shih-Lung Sun(孫世龍)1,Guan-Ru Su(蘇冠儒)1, Jau-Shiung Fang(方昭訓), Characteristics of Cu Thin Film prepared by Electrochemical Atomic Layer Deposition, TACT 2014, Oct. 17-18, 2014, TWN中華民國(臺灣) |
| 2014 | J.S. Fang, C.S. Lin, Y.Y. Huang, T.S. Chin, Hydrophobic and oleophobic properties of fluorocarbon films grown with C3F8/C4F8 and C2H2 containing HMDSO/Ar, VASSCAA-7, Oct. 05-09, 2014, TWN中華民國(臺灣) |
| 2014 | J.S. Fang, Y.S. Liu, T.S. Chin, Layer by layer growth of copper silver film using underpotential deposition by an electrochemical process, SATF 2014, Sep. 15-19, 2014, TUR土耳其共和國 |
| 2014 | J.S. Fang, C.J. Cai, J.H. Lee, T.S. Chin , Phase formation and stability of Cu-Ge films with low electrical resistivity, ThinFilm 2104, Jul. 15-18, 2014, CHN大陸地區(大陸) |
| 2013 | Jau-Shiung Fang, Cyuan-Jian Cai, Jiing-Herng Lee, Thermal stability of Cu3Ge film prepared by magnetron co-sputtering using a copper target and a germanium target, Thermec 2013, Dec. 02-06, 2013, USA美國 |
| 2013 | 方昭訓 韓宗瞱 張凱民 , Properties of co-sputtered AgGe and TaGe thin films , 兩岸工程材料會議, Oct. 25-28, 2013, CHN大陸地區(大陸) |
| 2013 | J.S. Fang, C.S. Lin, M.Y.Hsu, Y.Y. Huang, High hydrophobic fluorocarbon films prepared using C3F8 and C2H2 precursors, TACT 2013, Oct. 05-09, 2013, TWN中華民國(臺灣) |
| 2013 | J.S. Fang, Cu(CoN) 與CoN顆粒薄膜應用於銅製程之特性, 第八屆海峽兩岸超微顆粒學術研討會, Aug. 25-29, 2013, CHN大陸地區(大陸) |
| 2013 | Jau-Shiung Fang, Wu-Jia Su, Meng-Shuo Huang, Chin-Fu Chiu , Tsung-Shune Chin, Characteristics of plasma-treated amorphous Ta-Si-C film as a diffusion barrier for copper metallization , TMS 2013 (invited speaker), Mar. 01-07, 2013, USA美國 |
| 2012 | 1. 方昭訓、王漢瑜、柳耀翔, RuO2擴散阻礙層與同連導線製程特性探討, 材料年會, Huwei, Taiwan, Nov. 23-24, 2012, TWN中華民國(臺灣) |
| 2012 | 韓宗曄、林靜修、方昭訓 , 濺鍍法製備Ag-Ge及Ta-Ge之特性, TVS-2012, Oct. 26, 2012, TWN中華民國(臺灣) |
| 2012 | L.C. Yang , T.C. Lee , Low resistivity Fe-Co-B-Ti-Nb high entropy thin film as a copper barrier, ISMANAM 2012, Jun. 18-21, 2012, RUS俄羅斯聯邦 |
| 2011 | J.S. Fang , Y.T. Chen , Passivation of copper-hafnium thin films using self-forming hafnium oxide, TACT2011, Nov. 20-23, 2011, TWN中華民國(臺灣) |
| 2011 | 鍾德儒, 柏方茹, 徐嘉禧, 方昭訓, 高能隙低電阻Mg摻雜AZO透明導電薄膜之特性, 第六屆海峽兩岸工程材料研討會, Nov. 20-23, 2011, CHN大陸地區(大陸) |
| 2011 | Jau-Shiung Fang , Wu-Jia Su , Ting-Yi Lin , Chung-Shiun Chin , Meng-Shuo Huang , Characteristics of amorphous Ta-Si-C film as a diffusion barrier for copper metallization, ICETI 2011, Nov. 11-15, 2011, TWN中華民國(臺灣) |
| 2011 | 黃孟碩, 王漢瑜, 方昭訓, 雙層超薄Ru/Ta-Si-C擴散阻障層與銅連導線製程特性探討, 2011 真空年會, Oct. 28, 2011, TWN中華民國(臺灣) |
| 2011 | J.S. Fang , Y.C. Lee , Fe-Co-B-Nb High Entropy Thin Film for Copper Metallization, EUROMAT 2011, Sep. 12-15, 2011, FRA法國 |
| 2011 | J.S. Fang , W.H. Luo , C.H. Hsu , J.C. Yang , T.K. Tsai , The Transparent Conductive Properties of Manganese-doped Zinc Oxide Films Deposited by Chemical Bath Deposition, TMS 2011, Feb. 27-Mar. 03, 2011, USA美國 |
| 2011 | J.S. Fang , J.H. Lin , B.Y. Chen , G.S. Chen , T.S. Chin , Low-resistivity RuTaC barriers for Cu interconnects, TMS 2011, Feb. 27-Mar. 03, 2011, USA美國 |
| 2010 | N2含量對Cu(CoN)合金薄膜特性影響之探討, 太陽能電池研討會, Dec. 02, 2010 |
| 2010 | 電漿改質Ta-Si-C薄膜特性與銅製程擴散阻礙層探討, 中國材料科學年會, Nov. 24-25, 2010 |
| 2010 | Preparation of properties of Zinc oxide and Manganese-doped Zinc oxide by chemcial bath deposition, 2010海峽兩岸顆粒技術研討會, Aug. 15-17, 2010 |
| 2010 | 無電鍍複合鍍製備Al2O3-黑鎳太陽能選擇性複合吸收膜之性質探討, 2010海峽兩岸顆粒技術研討會, Aug. 15-17, 2010 |
| 2009 | 3 nm Ta-C-N阻障層特性與銅製程整合, 真空年會, Dec. 18, 2009 |
| 2009 | Cu(CoN)合金薄膜特性探討, 真空年會, Dec. 18, 2009 |
| 2009 | 超薄Ta-C-N薄膜特性與銅製程整合探討, Annual Conference of the Chinese Society for Material Science., Nov. 26-28, 2009 |
| 2009 | 鋁酸鋅鉻(ZnAl2O4:Cr) 膠體粉末之螢光特性, 中華民國材料科學學會2009年年會, Nov. 26-28, 2009 |
| 2009 | 電漿表面改質Ta-Si-C 三元合金薄膜之特性探討, Annual Conference of the Chinese Society for Material Science., Nov. 26-28, 2009 |
| 2009 | 5 nm Ta-Si-C薄膜特性與銅製程整合, Annual Conference of the Chinese Society for Material Science., Nov. 26-28, 2009 |
| 2009 | 高能隙低電阻Mg 摻雜AZO 透明導電薄膜製備與性質, Annual Conference of the Chinese Society for Material Science., Nov. 26-28, 2009 |
| 2009 | Cu(CoN)合金薄膜之特性研究, Annual Conference of the Chinese Society for Material Science., Nov. 26-28, 2009 |
| 2009 | 探討DMAB濃度對ZnO化學鍍製備薄膜性質, Annual Conference of the Chinese Society for Material Science., Nov. 26-28, 2009 |
| 2009 | 超薄(Ru-Ta)Si-C非晶質擴散阻障層與銅製程整合特性研究, 熱處理年會, Nov. 24, 2009 |
| 2009 | Mn:ZnO 透明導電氧化物與稀磁半導體薄膜之製備, 熱處理年會, Nov. 24, 2009 |
| 2009 | 超薄TaCN薄膜阻障層與銅製程整合特性探討, 熱處理年會, Nov. 24, 2009 |
| 2009 | Highly thermal-stable ultrathin Ta-Si-C amorphous film as a diffusion barrier for Cu interconnection, THERMEC, Aug. 25-29, 2009, DEU德意志聯邦共和國(德國) |
| 2008 | 化學鍍浴沉積法製備ZnO薄膜之性質, 兩岸顆粒會議, Dec. 09-11, 2008 |
| 2008 | 超薄Ta-Si-C非晶質薄膜之熱穩定性, Taiwan Society for Metal Heart Treatment, Dec. 06, 2008 |
| 2008 | 10 nm之Ta-Si-C阻障層特性與銅製程整合探討, Annual Meeting of TACT, Dec. 06, 2008 ~ Dec. 06, 2009 |
| 2008 | 超薄AZO阻障層特性探討, Annual Meeting of TACT, Dec. 05-06, 2008 |
| 2008 | In:AZO透明導電薄膜之製備與性質, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2008 | 化學鍍浴沉積法製備ZnO薄膜之性質, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2008 | 添加少?鑭元素之銀薄膜特性之研究, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2008 | Ta-Si-C阻障層特性探討, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2008 | 自我鈍化型銅鎂合?薄膜電性及結構特性, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2008 | Ru/NiSi/Si應用於銅接觸栓?擴散阻障層之特性探討, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2008 | 共濺鍍製備Cu1-xHfx薄膜擴散阻礙特性之研究, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2008 | 自我鈍化型銅鉿合?薄膜抗氧化性及電性研究, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2008 | 化學鍍浴沉積製備ZnO透明導電薄膜之研製, Annual Conference of the Chinese Society for Material Science., Nov. 21-22, 2008 |
| 2007 | 超薄TaSiC阻障層特性探討, 能源與光電薄膜科技研討會, Dec. 21-22, 2007 |
| 2007 | 熱處理對金屬靶製備氧化銦鋅薄膜性質之影響, 材料年會, Nov. 16-17, 2007 |
| 2007 | 自我鈍化型銅鉿合金薄膜抗氧化性及電性研究, 材料年會, Nov. 16-17, 2007 |
| 2007 | 摻雜In之AZO透明導電薄膜性質, 材料年會, Nov. 16-17, 2007 |
| 2007 | 微?摻雜鉿之鉭薄膜阻障層特性探討, 材料年會, Nov. 16-17, 2007 |
| 2007 | 超薄鉭矽化物銅製程阻障層特性探討, 材料年會, Nov. 16-17, 2007 |
| 2007 | Enhancement of conductivity and transmittance of Al-doped ZnO thin films prepared by a metallic Zn:Al target, EUROMAT 2007, Sep. 10-13, 2007, DEU德意志聯邦共和國(德國) |
| 2007 | Preparation of the High-Quality Indium Zinc Oxide by Reactive Magnetron Co-sputtering Technique from Indium and Zinc Metallic Targets, TMS2007, Feb. 25-Mar. 01, 2007, USA美國 |
| 2006 | 氧化銦絕緣層之製備與穿隧磁阻特性, Annual Conference of the Chinese Society for Material Science, Nov. 24-25, 2006 |
| 2006 | 不連續Co/TiO2顆粒合金多層薄膜的磁阻特性, Annual Conference of the Chinese Society for Material Science, Nov. 24-25, 2006 |
| 2006 | 射頻交流磁控濺鍍ZnO:Al透明導電薄膜之材料特性與研究, Annual Conference of the Chinese Society for Material Science, Nov. 24-25, 2006 |
| 2006 | 離子束濺鍍與磁控濺鍍製備Ta擴散阻礙層與銅製程之特性, Annual Conference of the Chinese Society for Material Science, Nov. 24-25, 2006 |
| 2006 | 鎳矽化物銅製程阻障層之特性探討, Annual Conference of the Chinese Society for Material Science, Nov. 24-25, 2006 |
| 2006 | 金屬靶製備氧化銦鋅薄膜性質之影響, Annual Conference of the Chinese Society for Material Science, Nov. 24-25, 2006 |
| 2006 | 以Zn:Al金屬靶濺鍍沉積製備Al:ZnO薄膜之透明導電膜性質, Annual Conference of the Chinese Society for Material Science, Nov. 24-25, 2006 |
| 2006 | 利用Ta-Co-N作為銅製程擴散阻礙層之研究, Annual Conference of the Chinese Society for Material Science, Nov. 24-25, 2006 |
| 2006 | Evaluation of magnetoresistance characteristic of Co-Ti-O granular alloy thin films, 兩岸顆粒會議, Aug. 31-Sep. 02, 2006 |
| 2006 | 氧化銦鋅(IZO)非晶質薄膜擴散阻礙特性與銅製程整合, Annual Conference of Taiwan Vacuum Society, Feb. 17, 2006 |
| 2006 | 鈷/氧化鈦顆粒合金多層薄膜的磁阻特性研究, Annual Conference of Taiwan Vacuum Society, Feb. 17, 2006 |
| 2006 | Characterization of polycrystalline CuInSe2 thin films deposited by sputtering and evaporation as a function of composition, Annual Conference of Taiwan Vacuum Society, Feb. 17, 2006 |
| 2006 | 自我鈍化型銅銦合金薄膜之固溶特性及電性之研究, Annual Conference of Taiwan Vacuum Society, Feb. 17, 2006 |
| 2006 | Electrical characteristic and microstructure of ternary alloy TaxCoyNz thin films deposited by reactive sputtering, Annual Conference of Taiwan Vacuum Society, Feb. 17, 2006 |
| 2005 | J.S. Fang , M.L. Ker , T.P. Hsu , Thermal stability enhancement of sputtered Ta-Co-N diffusion barrier layer for copper metallization, EUROMAT 2005, Sep. 05-08, 2005, CZE捷克共和國(捷克) |
| 2005 | J.S. Fang , L.C. Yang , T.P. Hsu , Diffusion Barrier Properties of DC Sputtering Deposited Ta-Ni Films in Cu/SiO2/Si Contact Schemes, EUROMAT 2005, Sep. 05-08, 2005, CZE捷克共和國(捷克) |
| 2005 | Designing experimental determination of sheet, TMS2005, Feb. 13-17, 2005, USA美國 |
| 2005 | Designing experimental determination of sheet, TMS2005, Feb. 13-17, 2005 |
| 2004 | Crystallization and failure behaviors of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization, 材料年會, Nov. 10-11, 2004 |
| 2004 | Diffusion barrier characteristics of amorphous Ta50Fe50 thin film prepared by a DC sputtering method, 材料年會, Nov. 10-11, 2004 |
| 2004 | Diffusion barrier properties of amorphous Ta-Co thin film for copper metalization, 材料年會, Nov. 10-11, 2004 |
| 2004 | 低溫燃燒合成製備NixZn1-xFe2O4(0.3 x 0.8) 鐵氧體粉末與特, 兩岸奈米顆粒會議, Aug. 31-Sep. 02, 2004 |
| 2004 | 燃燒法合成鐵鎳合金奈米粉末及包覆金的製程與特性, 兩岸奈米顆粒會議, Aug. 31-Sep. 02, 2004 |
| 2003 | Crystallization and failure behaviors of Ta-Co nanostructured/amorphous diffusion barriers for copper metallization, 材料年會, Nov. 10-11, 2003 |
| 2002 | F.W. Tsai , T.S. Chin , J.S. Fang, Highly [00l] Texture and CMR of Sputtered La-Ca-Mn-O Thin Films on Silicon with Buffer Layers, International Magnetism and Magnetic Materials Conference, Sep. 03-07, 2002, NLD荷蘭王國(荷蘭) |
| Project Category | Year | Project Title | Job Title | Period |
|---|---|---|---|---|
| 政府其他案件 | 2026 | 「115學年度大專校院國際生留臺就業輔導專業化計畫」 | 主持人 | 2026.08 ~ 2027.07 |
| 政府學術研究計畫-科技部專題研究計畫 | 2026 | 鈷合金中段連導線之微量合金與界面阻障強化工程－電化學原子層沈積超微量鈷合金薄膜導線雙重阻障工程 | 主持人 | 2026.08 ~ 2027.07 |
| 政府學術研究計畫-科技部專題研究計畫 | 2026 | 彩色電介質-金屬-電介質(DMD)疊層結構太陽熱能吸收體之光學性質與耐久性能研究 | 共同(協同)主持人 | 2026.08 ~ 2027.07 |
| 企業產學計畫(含公營及私人企業) | 2025 | ACS-高速主軸材料精進 | 主持人 | 2025.11 ~ 2026.10 |
| 政府學術研究計畫-科技部專題研究計畫 | 2025 | 114年度【新式中段互連導線之新創製作工藝－建構電化學原子層沉積細微鈷薄膜導線之高導電性與微量合金強化工程(2/2)】 | 主持人 | 2025.08 ~ 2026.07 |
| 政府其他案件 | 2025 | 教育部補助「114學年度大專校院國際生留臺就業輔導專業化計畫」 | 主持人 | 2025.08 ~ 2026.07 |
| 企業產學計畫(含公營及私人企業) | 2025 | ACS-封裝薄膜製成品質標準資料建置 | 主持人 | 2025.06 ~ 2028.05 |
| 企業產學計畫(含公營及私人企業) | 2024 | ACS-陶瓷空氣軸承製作與燒結製程(IV) | 主持人 | 2024.11 ~ 2025.10 |
| 政府學術研究計畫-科技部專題研究計畫 | 2024 | 113年度【新式中段互連導線之新創製作工藝-建構電化學原子層沉積細微鈷薄膜導線之高導電性與微量合金強化工程(1/2)】 | 主持人 | 2024.08 ~ 2025.07 |
| 企業產學計畫(含公營及私人企業) | 2023 | ACS-陶瓷空氣軸承製作與燒結製程(III) | 主持人 | 2023.11 ~ 2024.10 |
| 政府學術研究計畫-科技部專題研究計畫 | 2023 | 111年度 【 後銅時代之中段(MOL)導線新式整合方案－實現電化學原子層析鍍雙重阻障鈷基&釕基薄膜介面整合暨超填充柱塞/導線合金強化工程 】 | 主持人 | 2023.08 ~ 2024.07 |
| 企業產學計畫(含公營及私人企業) | 2022 | ACS-陶瓷空氣軸承製作與燒結製程(II) | 主持人 | 2022.11 ~ 2023.10 |
| 政府學術研究計畫-科技部專題研究計畫 | 2022 | 111年度 【 後銅時代之中段(MOL)導線新式整合方案－實現電化學原子層析鍍雙重阻障鈷基&釕基薄膜介面整合暨超填充柱塞/導線合金強化工程 】 | 主持人 | 2022.08 ~ 2023.07 |
| 企業產學計畫(含公營及私人企業) | 2021 | ACS-陶瓷空氣軸承製作與燒結製程 | 主持人 | 2021.10 ~ 2022.09 |
| 政府學術研究計畫-科技部專題研究計畫 | 2021 | 科技部109年度 【 革命性中段(MOL)全鈷導線材料與新式雙鑲嵌製程之整合研究－電化學原子層沉積全鈷導線之均向性填充與合金強化工程 】2年期 | 主持人 | 2021.08 ~ 2022.07 |
| 政府學術研究計畫-科技部專題研究計畫 | 2020 | 科技部109年度 【 革命性中段(MOL)全鈷導線材料與新式雙鑲嵌製程之整合研究－電化學原子層沉積全鈷導線之均向性填充與合金強化工程 】2年期 | 主持人 | 2020.08 ~ 2021.07 |
| 企業產學計畫(含公營及私人企業) | 2020 | ACS-線圏優化製程 | 主持人 | 2020.08 ~ 2021.07 |
| 政府學術研究計畫-科技部專題研究計畫 | 2019 | 科技部107年度 【 全面自阻障銅合金導線與孔隙介電層之材料與製程整合(Ⅱ)－子計畫二 ：全面自阻障電化學原子層沉積銅合金導線與孔隙介電層整合(Ⅱ) 】(2年期)-108年 | 主持人 | 2019.08 ~ 2020.07 |
| 企業產學計畫(含公營及私人企業) | 2019 | ACS-材料製程與性能精進計畫 | 主持人 | 2019.04 ~ 2022.03 |
| 政府學術研究計畫-科技部專題研究計畫 | 2018 | 科技部107年度 【 全面自阻障銅合金導線與孔隙介電層之材料與製程整合(Ⅱ)－子計畫二 ：全面自阻障電化學原子層沉積銅合金導線與孔隙介電層整合(Ⅱ) 】(2年期) | 主持人 | 2018.08 ~ 2020.07 |
| 企業產學計畫(含公營及私人企業) | 2018 | ACS-硬脆材料機械性質開發 | 主持人 | 2018.04 ~ 2019.03 |
| 政府學術研究計畫-科技部專題研究計畫 | 2017 | 科技部106年度 【 彩色鉻氮化物太陽熱能吸收體之製備及性能研究 】 | 共同(協同)主持人 | 2017.08 ~ 2018.07 |
| 政府學術研究計畫-科技部專題研究計畫 | 2017 | 全面自阻障銅導線與高孔隙介電層之材料與製程整合－子計畫二：全面自阻障電化學原子層沉積銅導線與高孔隙介電層整合 | 主持人 | 2017.08 ~ 2018.07 |
| 政府學術研究計畫-科技部專題研究計畫 | 2016 | 科技部105年度 【 CrON/Cr2O3/AlN/Al2O3彩色太陽能選擇性吸收膜 】學門名稱：再生能源 | 共同(協同)主持人 | 2016.08 ~ 2017.07 |
| 政府學術研究計畫-科技部專題研究計畫 | 2016 | 科技部104年度 【 孔隙介電層與超微銅導線新興鑲嵌製程之全程整合研究(II)－子計畫二：孔隙介電層之電化學原子層沉積雙重強化超微銅導線工程(II) 】2年期 | 主持人 | 2016.08 ~ 2017.07 |
| 政府學術研究計畫-科技部專題研究計畫 | 2016 | 高填充性銅金屬化製程 | 主持人 | 2016.07 ~ 2016.10 |
| 政府學術研究計畫-國科會專題研究計畫 | 2015 | 科技部104年度 【 鋁及矽氮化相對多元鉻氮化物太陽光吸收體之光學性質及熱穩定性的影響 】學門名稱：再生能源 | 共同(協同)主持人 | 2015.08 ~ 2016.07 |
| 政府學術研究計畫-國科會專題研究計畫 | 2015 | 科技部104年度 【 孔隙介電層與超微銅導線新興鑲嵌製程之全程整合研究(II)－子計畫二：孔隙介電層之電化學原子層沉積雙重強化超微銅導線工程(II) 】2年期(第一年) | 主持人 | 2015.08 ~ 2016.07 |
| 政府學術研究計畫-國科會專題研究計畫 | 2014 | 科技部103年度 【 孔隙介電層與超微銅導線新興鑲嵌製程之全程整合研究－子計畫二：孔隙介電層之電化學原子層沉積雙重強化超微銅導線工程 】(學門名稱：多功能性材料)(整合型) | 主持人 | 2014.08 ~ 2015.07 |
| 政府學術研究計畫-國科會專題研究計畫 | 2014 | 科技部103年度【圖案化矽晶片上製作高效率GaN-based LED】(學門名稱:固態照明(LED、OLED) | 主持人 | 2014.01 ~ 2014.12 |
| 政府學術研究計畫-國科會專題研究計畫 | 2013 | 國科會101年度【創新性自阻障型電化學析鍍銅/銀合金連導線製程開發】(第二年) | 主持人 | 2013.08 ~ 2014.07 |
| 政府學術研究計畫-國科會專題研究計畫 | 2013 | 國科會102年度 【 鉻及鉻鋁氮化物/氮氧化物高溫太陽光吸收體之製備研究 】 | 共同(協同)主持人 | 2013.08 ~ 2014.08 |
| 企業產學計畫(含公營及私人企業) | 2012 | ACS-液態金屬導線製作 | 主持人 | 2012.11 ~ 2013.10 |
| 政府學術研究計畫-國科會專題研究計畫 | 2012 | 創新性自阻障型電化學析鍍銅/銀合金連導線製程開發 | 主持人 | 2012.08 ~ 2013.07 |
| 政府學術研究計畫-國科會專題研究計畫 | 2012 | 國科會101年度 【 反應磁控濺鍍法製備過渡金屬氮化物-氮氧化物高溫太陽光吸收體之光學性質與熱穩定性探討 】 | 共同(協同)主持人 | 2012.08 ~ 2013.07 |
| 政府學術研究計畫-國科會專題研究計畫 | 2011 | 創新性自阻障型電化學析鍍銅/銀合金連導線製程開發 | 主持人 | 2011.08 ~ 2012.07 |
| 企業產學計畫(含公營及私人企業) | 2011 | 真空鍍膜鋁金屬鈍化層製作與著色製程 | 主持人 | 2011.08 ~ 2012.07 |
| 其他單位產學計畫 | 2011 | 太陽能光電科學營 | 主持人 | 2011.07 ~ 2011.07 |
| 政府其他案件 | 2011 | 100年度教育部「大學跨學門科學人才培育銜接計畫(總計劃)-綠色科技應用與有機農業科學人才培育計畫」 | 主持人 | 2011.01 ~ 2011.12 |
| 政府產學計畫 | 2011 | (###政府其他換政府產學###)100年度教育部補助技專校院設置聯合技術發展中心計畫-機密機械與微元件應用聯合技術發展中心計畫(第二年) | 主持人 | 2011.01 ~ 2011.12 |
| 政府學術研究計畫-國科會專題研究計畫 | 2010 | 超薄TaSi2Cx擴散阻礙層與銅金屬化製程 | 主持人 | 2010.08 ~ 2011.07 |
| 政府學術研究計畫-國科會專題研究計畫 | 2009 | 超薄TaSi2Cx擴散阻礙層與銅金屬化製程 | 主持人 | 2009.08 ~ 2010.07 |
| 政府產學計畫 | 2009 | 98年度學界協助中小企業科技關懷計畫-OCC導線鈍化製程 | 主持人 | 2009.03 ~ 2009.08 |
| 政府其他案件 | 2008 | 97年度獎勵大學教學卓越計畫-精進整體教學成效、強化光機電領域特色 | 共同(協同)主持人 | 2008.08 ~ 2009.07 |
| 政府學術研究計畫-國科會專題研究計畫 | 2008 | 超薄TaSi2Cx擴散阻礙層與銅金屬化製程 | 主持人 | 2008.08 ~ 2009.07 |
| 國科會專題計畫 | 2007 | CIGS化合物薄膜光伏元件之研製-創新型CIGS光伏元件背面電極研製與整合特性 | 主持人 | 2007.08 ~ 2008.07 |
| 政府產學計畫 | 2007 | 小產學--高透光率/高導電度透明導電氧化物薄膜研製 | 主持人 | 2007.05 ~ 2008.04 |
| 國科會案件 | 2006 | 離子束沉積/電漿改質光伏元件透明導電薄膜製程特性(重點研究計畫) | 主持人 | 2006.08 ~ 2007.07 |
| 政府產學計畫 | 2005 | 離子束濺鍍製備薄膜電晶體銅合金薄膜閘極、源/汲極製程 | 主持人 | 2005.11 ~ 2006.10 |
| 技術服務案 | 2005 | 離子束濺鍍製備薄膜電晶體銅合金薄膜閘極、源/汲極製程 | 主持人 | 2005.11 ~ 2006.10 |
| 產學計畫案(私人企業或法人機構之案件) | 2005 | 離子束濺鍍製備薄膜電晶體銅合金薄膜閘極、源/汲極製程 | 主持人 | 2005.11 ~ 2006.10 |
| 國科會案件 | 2005 | 離子束濺鍍/緻密新穎鉭基非晶質薄膜擴散阻礙特性與銅製程整合 | 主持人 | 2005.08 ~ 2006.07 |
| 政府其他部會案件 | 2005 | 綠色生物材料科技學程 | 主持人 | 2005.08 ~ 2006.07 |
| 國科會案件 | 2004 | 可撓式顯示器技術的新式低溫多晶矽薄膜電晶體製程 | 主持人 | 2004.11 ~ 2005.10 |
| 產學計畫案(私人企業或法人機構之案件) | 2004 | 可撓式顯示器技術的新式低溫多晶矽薄膜電晶體製程 | 主持人 | 2004.11 ~ 2005.10 |
| 技術服務案 | 2004 | 可撓式顯示器技術的新式低溫多晶矽薄膜電晶體製程 | 主持人 | 2004.11 ~ 2005.10 |
| 國科會案件 | 2004 | 高導電性非晶質鉭基擴散阻礙層製備與銅金屬化製程整合 (II) | 主持人 | 2004.08 ~ 2005.07 |
| 國科會案件 | 2003 | 高導電性非晶質鉭基擴散阻礙層製備與銅金屬化製程整合 (I) | 主持人 | 2003.08 ~ 2004.07 |
| 國科會案件 | 2002 | 無電鍍製備次微米自行對準矽化物與銅製程整合研究 | 主持人 | 2002.08 ~ 2003.07 |
| Publish Date | Patent Title | Patent Number | Patent Country | Authors |
|---|---|---|---|---|
| 2020/10/11 | 控制表面侷限氧化還原反應時間製備合金薄膜的方法METHODFORPREPARINGALLOYTHINFILMBYCONTROLLINGSURFACE-LIMITEDREDOXREACTIONTIME | I707068 | 國內 | 方昭訓、王宣閔、謝于飛、許鎮獻、陳錦山、鄭義榮 |
| 2013/08/23 | 減震裝置之阻尼 | 發明第I482864號 | 國內 | 方昭訓,沈益帆 |
| Category | Title | Patent Granted | Patent Title | Patent Number |
|---|---|---|---|---|
| 先期技術移轉 | 高透光率/高導電度透明導電氧化物薄膜研製 | false | ||
| 先期技術移轉 | 離子束濺鍍製備薄膜電晶體銅合金薄膜閘極、源/汲極製程 | false | ||
| 先期技術移轉 | 可撓式顯示器技術的新式低溫多晶矽薄膜電晶體製程 | false |
| Year | Paper Title |
|---|---|
| 2025 | CHANG, CHI-LIN, Study on the Structure and Properties of Trace Silver-Doped Cobalt Thin Films Prepared by Electrochemical Atomic Layer Deposition, 2025 |
| 2025 | PAN, XIN-YU, Electrochemical Deposition of Trace Molybdenum-Doped Cobalt Alloy Thin Films and Interconnect Properties, 2025 |
| 2024 | SHI, XIAO-JIE, Evaluations of electrochemically co-deposited cobalt alloy thin films with low to moderate tungsten incorporation for interconnect applications., 2024 |
| 2024 | LIU, GUAN-TING, Structure and electrical resistivity size effect of metal silicides, 2024 |
| 2024 | LU, WAN-HUI, Characteristics of Cobalt Alloy Thin Films with Trace Copper Doping via Atomic Layer Replacement Method, 2024 |
| 2023 | Ru(Co) Thin Film Prepared by Underpotential Deposition Co and Surface-limited Redox Replacement Ru, 2023 |
| 2023 | Characteristics of Co-Ru Alloy Thin Films Prepared by Co-sputtering and Electrochemical Co-deposition, 2023 |
| 2023 | Comparison of tools with different coatings in gun drilling, 2023 |
| 2023 | Layer-by-layer deposition of Co(Ru) Films on TiSi2 Substrate by Sequentially Manipulating Underpotential Deposition of Co and Ru, 2023 |
| 2023 | The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films, 2023 |
| 2021 | Fabrication of Co(Ru) Interconnect Thin Film by Manipulating Monolayer Underpotential Deposition, 2021 |
| 2021 | Integration of Electrochemically Deposited Co(P) Thin Film and Self-Assembled Monolayers, 2021 |
| 2021 | Co(Ni) Film Prepared by Controlling Open Circuit Potential Duration of Ni During Surface-limited Redox Replacement of the Underpotential Deposited Co, 2021 |
| 2021 | Characteristics of Co-Sputtered Co(B) Alloy Film Applied to Interconnection and Diffusion Barrier, 2021 |
| 2019 | RuAl Diffusion Barrier Layer for Copper Metallization, 2019 |
| 2019 | Electrochemical co-deposition of Lightly Doped Co(P) Alloy Thin Films for Application in Interconnects, 2019 |
| 2019 | Co(Ru) Alloy Thin Film Prepared by Controlling Ru-OCP Time during SLRR to replace the Co-UPD, 2019 |
| 2019 | Characteristics of Self-Forming Cu(Sc) Films Deposited by Co-Sputtering as a Diffusion Barrier for Copper Metallization, 2019 |
| 2018 | Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement, 2018 |
| 2018 | Cu(Ru) Alloy Thin Films Prepared by Electrochemical Co-deposition, 2018 |
| Guan-Ru Su, Studies of Cu Thin Film by Electrochemical Atomic Layer Deposition on Pattern Substrates | |
| Long-Yi Lin, Additives Affecting the Growth of Cu Thin Film Prepared on Cobalt-Based Substrates by Electrochemical Atomic Layer Deposition | |
| Chin-Fu Chiu, Ultrathin Ta-Si-C amorphous films as a diffusion barrier for copper metallization | |
| Wei-Syuan Weng, Fabrication of GaN-based LED on Patterned-Si Substrates | |
| Yaun-Ting Chan, Study on Against Oxidation and Sulfidation of Ag(La) thin film | |
| Jia-Huei Lin, Ru as a diffusion barrier for sub-45-nm Cu contact plug | |
| Wei-Hsiang Luo, Preparation and Properties of the Zinc Oxide andManganese-Doped Zinc Oxide by Chemical Bath Deposition | |
| Jain-Hao Chen, Thermal Stability of Copper Film Prepared on a Tantalum Nitride/Tantalum Substrate by Electrochemical Atomic Layer Deposition | |
| Yu-Tzu Chen, Improvement of Against Oxidation and Electrical Properties of Passivated Cu(Hf) Thin Film | |
| Chih-Hsiang Huang, Barrier properties of co-sputtering Cu1-xHfx thin films | |
| Wei-Jhih Syu, Preparation of Cu(Mn) Thin Films on Pattern Substratesby Electrochemical Atomic Layer Deposition | |
| Jai-Ling Wu, Additives and pH Value Affecting the Growth of Cu Film Prepared on a Cobalt-based Substrate via Electrochemical Atomic Layer Deposition | |
| Jia-Hong Hung, Preparation of Ag andAg(Cu) Thin Film by Electrochemical Atomic Layer Deposition | |
| Jhih-Yan Wong, Use of Pulse Pb-UPDs Fabricates a High Gap-Filling Cu Film on Trenched Ru/pattern/Si | |
| Yi-Chiun Li, Fe-Co-B-Ti-Nb High Entropy Thin Film for Copper Metallization | |
| Ming-Yuan Hsu, Electrochemical Atomic Layer Deposition of Cu-Ru Film | |
| Yiou-Hsin Liou, Preparation and Characterisitics of Electrochemical Atomic Layer Deposited Copper-Silver Alloy Film on Interconnection | |
| Shang-Lun Hsieh, Characteristics and Preparation of Electrochemical Deposition Ag-Cu Film | |
| Shih-Lung Sun, Studies of Cu(Mn) Thin Film by Electrochemical Atomic Layer Deposition (EC-ALD) | |
| Kai-Min Chang, Preparation of Silver-Copper Alloy Film by Electroplating and the Application of the Film on Metallization | |
| Chih-Hao Wang, Study on Amorphous Silicon Floating-Gate Doping Concentration and the Resistance | |
| Hung-Wei Chen, Applications of RFID in Confined Space Management System | |
| Wen-Jing Li, 5 nm of Ru-(Ta)-B diffusion barrier layer and copper processing characteristics | |
| Hung-Chi Tien, Improvement of Against Oxidation and Electrical Properties of Passivated Cu(Al) Thin Film | |
| Tzu-Yu Wang, Characteristics of Cu(CoN) Film and CoN Film on Copper Interconnection | |
| Meng-Shuo Huang, Properties of Ultrathin Ru/TaSiC Bi-Layer Diffusion Barrier for Cu Interconnects | |
| HSU, CHEN-HSIEN, Cu(Mn) Alloy Thin Films Prepared by Electrochemical Co-deposition | |
| WANG, SYUAN-MIN, Cu(Co) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Co Through Surface-limited Redox Replacement | |
| Han-Yu Wang, RuOx Film as a Diffusion Barrier For Copper Metallization | |
| cyuan-jian cai, Preparation and Thermal Stability of the Cu3Ge film on Si Substrate by Reactive Magnetron Co-sputtering Using Copper and Germanium Metallic Targets | |
| Shao-Chan Ho, Preparation and Properties of Copper and Zinc Tin Sulfide Photovoltaic Components Absorbing Layer by Magnetron Co-sputterin | |
| Tsung-Yeh Han, Properties of Co-Sputtered Ag-Ge and Ta-Ge Thin Films | |
| Ching- Sau Lin, Hydrophobic and Oleophobic Fluorocarbon Films Prepared Using C4F8 and C3F8 Precursors | |
| Wu-Jia Su, Characteristics of amorphous Ta-Si-C film as adiffusion barrier for copper metallization | |
| Chun-Ke Chen, Research and Application of the OCC Heated Mold Continuous Casting Method |
| Course Title | Class | Reference Link |
|---|---|---|
| 專業英文 | 四材料二乙 | https://tqas.nfu.edu.tw/course_schedule/detail/11511634 |
| 專業英文 | 四材料二甲 | https://tqas.nfu.edu.tw/course_schedule/detail/11511617 |
| 半導體元件與製程 | 碩材綠二甲 | https://tqas.nfu.edu.tw/course_schedule/detail/11510237 |