Department of Materials Engineering and Science, National Gormosa University

Major Education

Ph.D., Department of Materials Science and Engineering, National Tsing Hua University

Areas of Expertise and Research Fields

Thin Film Fabrication Technology / Semiconductor Processing / Microelectronic Materials / Flat Panel Display Processing / Thin Film Solar Cell Devices / Optoelectronic Devices / Nanomagnetic Materials / Magnetoresistive Thin Film Materials

Relevant Experience

Chief Secretary, Secretariat Office, National Formosa University 2023/8-2024/7

Chair, Department of Materials Science and Engineering, National Formosa University 2021/2-2023/7

Visiting Scholar, Department of Electrical Engineering Physics, Tel Aviv University, Israel 2016/7-2016/10

Dean of Academic Affairs, Office of Academic Affairs, National Formosa University 2012/8-2013/7

Dean of Research and Development, Office of Research and Development, National Formosa University 2012/2-2012/7

Director, Research and Development Center, National Formosa University 2010/10-2012/1

Visiting Scholar, Department of Materials Science, University of Cambridge, United Kingdom 2009/8-2010/7

Chair, Department of Materials Science and Engineering, National Formosa University 2004/2-2009/1

Technology Development Department, United Microelectronics Corporation 1997/9–2000/7

Funding or Commissioning Agency

Project Duration

Project Title (Project Number)

2018/8/1~2020/7/31

Material and Process Integration of Self-Forming Barrier Copper Alloy Interconnects and Porous Dielectric Layers (Ⅱ)－Subproject II: Integration of Self-Forming Barrier Electrochemical Atomic Layer Deposited Copper Alloy Interconnects and Porous Dielectric Layers (Ⅱ) (MOST107-2221-E150-002-MY2)

2017/8/1~2018/7/31

Preparation and Performance Study of Colored Chromium Nitride Solar Thermal Absorbers (MOST106-2221-E150-053)

2017/8/1~2018/7/31

Material and Process Integration of Self-Forming Barrier Copper Interconnects and Highly Porous Dielectric Layers－Subproject II: Integration of Self-Forming Barrier Electrochemical Atomic Layer Deposited Copper Interconnects and Highly Porous Dielectric Layers (MOST106-2221-E150-010)

2016/8/1~2017/7/31

Full Integration Study of Emerging Damascene Processes for Porous Dielectric Layers and Ultra-fine Copper Interconnects (II)－Subproject II: Electrochemical Atomic Layer Deposition Double-Strengthened Ultra-fine Copper Interconnect Engineering in Porous Dielectric Layers (II) (MOST104-2221-E150-005-MY2)

2015/8/1~2016/7/31

Full Integration Study of Emerging Damascene Processes for Porous Dielectric Layers and Ultra-fine Copper Interconnects (II)－Subproject II: Electrochemical Atomic Layer Deposition Double-Strengthened Ultra-fine Copper Interconnect Engineering (II) (MOST104-2221-E150-005-MY2 )

2015/8/1~2016/7/31

Effects of Aluminum and Silicon Nitride on the Optical Properties and Thermal Stability of Multicomponent Chromium Nitride Solar Absorbers (MOST104-2221-E150-066)

2014/8/1~2015/7/31

Full Integration Study of Emerging Damascene Processes for Porous Dielectric Layers and Ultra-fine Copper Interconnects－Subproject II: Electrochemical Atomic Layer Deposition Double-Strengthened Ultra-fine Copper Interconnect Engineering in Porous Dielectric Layers (MOST103-2221-E150-006)

2014/1/1~2014/12/31

Fabrication of High-Efficiency GaN-based LEDs on Patterned Silicon Wafers (MOST103-2623-E150-002-ET )

2013/8/1~2014/8/31

Preparation Study of High-Temperature Solar Absorbers of Chromium and Chromium Aluminum Nitride/Oxynitride (NSC102-2221-E150-039)

2013/8/1~2014/7/31

Development of Innovative Self-Forming Barrier Electrochemical Deposition Copper/Silver Alloy Interconnect Processes (NSC100-2221-E150-033-MY3)

2012/8/1~2013/7/31

Optical Properties and Thermal Stability of Transition Metal Nitride-Oxynitride High-Temperature Solar Absorbers Prepared by Reactive Magnetron Sputtering (NSC101-2221-E150-046 )

National Science Council

2011/8/1~2014/7/31

Development of Innovative Self-Forming Barrier Electrochemical Deposition Copper/Silver Alloy Interconnect Processes (NSC100-2221-E-150-033-MY3)

National Science Council

2008/8/1~2011/7/31

Ultra-thin TaSi2Cx Diffusion Barrier Layers and Copper Metallization Processes (NSC97-2221-E-150-001-MY3)

National Science Council

2007/8/1~2008/7/31

Development of CIGS Compound Thin Film Photovoltaic Devices－Fabrication and Integration Characteristics of Innovative CIGS Photovoltaic Back Electrodes (NSC96-2221-E-150-034)

National Science Council

2007/5/1~2008/4/30

Development of High Transparency and High Conductivity Transparent Conductive Oxide Thin Films (NSC96-2622-E-150-003-CC3)

National Science Council

2006/8/1~2007/7/31

Process Characteristics of Transparent Conductive Thin Films for Photovoltaic Devices Prepared by Ion Beam Deposition/Plasma Modification (Key Research Project) (NSC 95-2221-E-150-006)

National Science Council

2005/11/1~2006/10/31

Ion Beam Sputtering Fabrication of Alloy Thin Film Gate and Source/Drain Processes for Thin Film Transistors (NSC 94-2622-E-150-029-CC3)

National Science Council

2005/8/1~2006/7/31

Ion Beam Sputtering/Dense Novel Tantalum-based Amorphous Thin Film Diffusion Barrier Properties and Copper Process Integration (NSC 94-2216-E-150-004)

National Science Council

2004/11/1~2005/10/31

Novel Low-Temperature Polycrystalline Silicon Thin Film Transistor Processes for Flexible Display Technology (NSC93-2262-E-150-054-CC3)

National Science Council

2004/8/1~2005/7/31

Preparation of Highly Conductive Amorphous Tantalum-based Diffusion Barrier Layers and Integration with Copper Metallization Processes (II) (NSC93-2215-E-150-004)

National Science Council

2003/8/1~2004/7/31

Preparation of Highly Conductive Amorphous Tantalum-based Diffusion Barrier Layers and Integration with Copper Metallization Processes (I) (NSC92-2215-E-150-004)

National Science Council

2002/8/1~2003/7/31

Electroless Preparation of Submicron Self-Aligned Silicides and Integration with Copper Processes (NSC-91-2215-E-150-001)

National Science Council

2002/1/1~2002/7/31

Integration Study of High-Temperature In-situ Sputtered Self-Aligned Silicides (CoSi2 and NiSi) with Copper Metallization Processes (NSC90-2215-E-150-001)

1

Giin-Shan Chen, Meng-Jie Lin, Chun-Wei Huang, Yi-Lung Cheng, Jau-Shiung Fang, Chih-I. Lin (2024, Oct). The impact of titanium alloying on altering nanomechanical properties and grain structures of sputter-deposited cobalt for electromigration reliability enhancement. Journal of Alloys and Compounds 1003 (2024) 175564

2

3

Jau-Shiung Fang, Ting-Hsun Su, Yi-Lung Cheng, Giin-Shan Chen (2024, Jul). Synergistic enhancement of adhesion and electromigration reliability of cobalt via super-diluted (0.06 at.%) tungsten alloying as next-generation interconnect materials. Microelectronics Reliability 158 (2024) 115427.

4

5

T.K. Tsai, Y.K. Lu, J.S. Fang, G.S. Chen (2024, Feb). Ultrasound assistance in the sensitization and activation of porous Al₂O₃ supports for improving the hydrogen separation of Pd/Al₂O₃ composite membranes. International Journal of Hydrogen Energy 55 (2024) 1007–1016.

6

Jau-Shiung Fang, Giin-Shan Chen, Chin-Chia Chang, Chien-Nan Hsiao, Wei-Chun Chen, Yi-Lung Cheng (2024, Jan). Understanding electromigration failure behaviors of narrow cobalt lines and the mechanism of reliability enhancement for extremely dilute alloying of manganese oxide. Journal of Alloys and Compounds 970 (2024) 172591.

7

Yi-Lung Cheng, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang (2023, Dec). Comparison of Barrier Efficiency for Self-Assembled Monolayers on SiO₂ by Using Decyltrimethoxysilane or 3-Aminopropyltrimethoxysilane Vapor Treatment. ECS J. Solid State Sci. Technol. 12 123009.

8

Yi-Lung Cheng, Hong-Chang Huang, Wei-Fan Peng, Giin-Shan Chen, Jau-Shiung Fang (2023, Oct). Comparison of Cobalt Integration with Various Dielectric Materials under Thermal and Electrical Stress. Coatings 2023, 13(10), 1818.

9

Yi-Lung Cheng, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang (2023, Jun). Comparison of Precursors for Self-Assembled Monolayers as Cu Barriers. ECS J. Solid State Sci. Technol. 12 063001.

10

Jau-Shiung Fang, Ching-En Lee, Yi-Lung Cheng, Giin-Shan Chen (2023, Apr). Reinforcement in electromigration reliability of Cu interconnects by alloying of extremely dilute MnO. Journal of Alloys and Compounds 951 (2023) 169974.

11

Yi-Lung Cheng, Kai-Hsieh Wang, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang (2023, Feb). Comparison of CoW/SiO₂ and CoB/SiO₂ Interconnects from the Perspective of Electrical and Reliability Characteristics. Materials 2023, 16(4), 1452.

12

Jau-Shiung Fang, Kun-Huang Chen, Yi-Lung Cheng, Giin-Shan Chen (2023,Feb). Layer-by-layer deposition of breakdown-strengthened Co(Ni) films by modulating termination time over the redox replacement. Materials Chemistry and Physics 296 (2023) 127222.

13

Giin-Shan Chen, Yen-Chang Pan, Wei-Chun Chen, Chien-Nan Hsiao, Chin-Chia Chang, Yi-Lung Cheng, Jau-Shiung Fang (2023, Jan). Dual near-zero-thickness sealing for the strengthening of cobalt thin films and nano-lines for future interconnect applications. Applied Surface Science 609 (2023) 155387.

14

Yi-Lung Cheng, Wei-Fan Peng, Chi-Jia Huang, Giin-Shan Chen, Jau-Shiung Fang (2023, Jun). Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials. Molecules 2023, 28(3), 1134.

15

Giin-Shan Chen, Chin-Chia Chang, Yen-Chang Pan, Yi-Lung Cheng, Jau-Shiung Fang (2022, Oct). Effect of Minor Alloying on Electromigration Reliability of Cobalt Nanowires for Advanced Interconnect Applications: Activation-Energy and Microstructure-Evolution Studies. SSRN.

16

Giin-Shan Chen, Ching-En Lee, Yi-Lung Cheng, Jau-Shiung Fang, Chien-Nan Hsiao, Wei-Chun Chen, Yiu-Hsiang Chang, Yen-Chang Pan, Wei Lee, Ting-Hsun Su (2022, Aug). Enhancement of Electromigration Reliability of Electroless-Plated Nanoscaled Copper Interconnects by Complete Encapsulation of a 1 nm-Thin Self-Assembled Monolayer. J. Electrochem. Soc. 169 082519.

17

Yi-Lung Cheng, Wei-Fan Peng, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang (2022, Jun). Comparison of Self-Assembled Monolayers on SiO₂ and Porous SiOCH Dielectrics by Decyltrimethoxysilane Vapor Treatment. Coatings 2022, 12(7), 926.

18

Ting-Kan Tsai, I-Ting Shih, Yi-Lung Cheng, Giin-Shan Chen, Jau-Shiung Fang (2022, Apr). Enhancement of breakdown strength and electromigration reliability for cobalt lines lightly doped with boron. Materials Chemistry and Physics 285 (2022) 126136.

19

Giin-Shan Chen, Ching-En Lee, Tzu-Ming Yang, Yi-Lung Cheng, Jau-Shiung Fang (2021, Dec). All-wet encapsulation and electroless superfilling process for the fabrication of self-assembled-monolayer encapsulated copper interconnects with enhanced electromigration reliability. Materials Letters 304 (2021) 130718.

20

Jau-Shiung Fang, Ching-En Lee, Yi-Lung Cheng, Giin-Shan Chen (2021, Aug). Strengthening the Electromigration Resistance of Nanoscaled Copper Lines by (3-aminopropyl) trimethoxysilane Self-Assembled Monolayer.  ECS J. Solid State Sci. Technol. 10 083007.

21

Giin-Shan Chen, Wen-Hong Chang, Chin-Chia Chang, Yi-Hsin Chien, Jau-Shiung Fang, Yi-Lung Cheng (2021, Aug). Structural models and barrier properties of amine-terminated trialkoxysilane monolayers incubated in nonpolar vs. polar protic solvents. Materials Chemistry and Physics 274 (2021) 125113.

22

Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang, Yi-Lung Cheng (2021, Jun). Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film. ECS J. Solid State Sci. Technol. 10 063005.

23

Yi-Lung Cheng, Wei-Fan Peng, Chih-Yen Lee, Giin-Shan Chen, Ying-Ning Lin, Jau-Shiung Fang (2021, Jun). Electrical and Reliability Perspectives for Self-Forming Barrier CuSc Metallization. ECS J. Solid State Sci. Technol. 10 065014.

24

Jau-Shiung Fang, Yu-Lin Wu, Yi-Lung Cheng, Giin-Shan Chen (2021, Apr). Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects. J. Electrochem. Soc. 168 042505.

25

Giin-Shan Chen, Wan-Ling Gao, Chin-Chia Chang, Jau-Shiung Fang, Yi-Lung Cheng (2021, Feb). Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloying for metallization of copper without a conventional metallic barrier. Materials Chemistry and Physics 259 (2021) 124034.

26

Jau-Shiung Fang, Tzu-Ming Yang, Yi-Lung Cheng, Giin-Shan Chen (2021, Feb). (3-Aminopropyl) trimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization. ECS J. Solid State Sci. Technol. 10 023003.

27

71

J.S. Fang^*, W.H. Luo, C.H. Hsu, J.C. Yang, and T.K. Tsai, (2011) “The Transparent Conductive Properties of Manganese-doped Zinc Oxide Films Deposited by Chemical Bath Deposition”, J. Electro. Mater. J. Electro. Mater Vol 41, No 1, 122-129,(SCI)

72

J.S. Fang, J.H. Lin, B.Y. Chen G.S. Chen and T.S. Chin, (2011)”Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects”, J. Electro. Mater. Vol.41, No.1, 138-141 (SCI)

73

T.K. Tsai, S.J. Hsueh, J.H. Lee and J.S. Fang (2011), “Optical Properties and Durability of Al2O3-NiP/Al Solar Absorbers Prepared by Electroless Nickel Composite Plating”, Vol. 41 No. 1 53-59 (SCI)

74

T.K. Tsai, S.S. Wu, C.S. Hsu, J.S. Fang, (2011) “Effect of Phosphorous on the Copper Diffusion Barrier Properties of Electroless CoWP Films”, Thin Solid Films 519 (2011) 4958–4962

75

J. S. Fang,^* J. H. Lin, B. Y. Chen and T. S. Chin, (2011) “Ultrathin Ru-Ta-C Barriers for Cu Metallization” J. Electrochem. Soc. 158 , H97-H102 (SCI)

76

 J. S. Fang,^* J. H. Lin, B. Y. Chen and T. S. Chin, (2010) “Ultrathin Ru-Ta-C Barriers for Cu Metallization” J. Electrochem. Soc. (Accepted)

79

W.H. Luo, T.K. Tsai, J.C.Yang, W.M. Hsieh, C.H. Hsu, and J.S. Fang* (2009),” Enhancement in Conductivity and Transmittance of Zinc Oxide Prepared by Chemical Bath Deposition”, J. Electro. Mater., 38 (11) 2264-2269. (SCI)

80

Jau-Shiung Fang*, Chin-Fu Chiu, Jia-Huei Lin, Ting-Yi Lin, and Tsung-Shune Chin (2009) “Failure Mechanism of 5 nm Thick Ta-Si-C Barrier Layers Against Cu Penetration at 750-800°C” J. Electrochem. Soc. 156 (2) H147-H152. (SCI)

81

L.C. Yang, C.Y. Cheng, and J.S. Fang (2008),”Characterization of polycrystalline CuInSe2 thin films deposited by sputtering and evaporation as a function of composition”, J. Phys. Chem. Solids 69, 435-440 (SCI)

82

C.S. Hsu, H.Y. Hsieh, and J.S. Fang* (2008) “Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films” J. Electro. Mater. 37 (6) 852-859. (SCI)

83

Ting-Yi Lin, Huai-Yu Cheng, Tsung-Shune Chin, Chin-Fu Chiu and Jau-Shiung Fang* (2008) “Highly Thermal-Stable Amorphous TaSi₂C_x Films as Diffusion Barrier” J. Electrochem. Soc. 155 (2) G29-G32. (SCI)

84

 J.S. Fang*, T.P. Hsu, M.L. Ker, H.C. Chen, J.H. Lee, C.S. Hsu, and L.C. Yang, (2008) “Evaluation of properties of Ta-Ni amorphous thin film for copper metallization in integrated circuits” J. Phys. Chem. Solids, 69, 430 – 434. (SCI)

85

T.Y. Lin, H.Y. Cheng, T.S. Chin, C.F. Chiu, and J.S. Fang* (2007) “5-nm-thick TaSiC amorphous films stable up to 750^oC as a diffusion-barrier for copper metallization” Appl. Phys. Lett. 91, 152908. (SCI)

86

J.S. Fang*, M.L. Ker and H.C. Chen, (2007) ”Evaluation of dc-sputtered Glassy Ta-Co-N Thin Film for Copper Metallization” J. Electro. Mater.,36 (11) 1462-1468. (SCI)

87

J.S. Fang*, T.P. Hsu, and H.C. Chen, (2007)” Barrier Properties of Amorphous Binary Ta-Ni Thin Films for Cu Interconnection” J. Electro. Mater. 36 (5) 614-622(SCI).

88

J.S. Fang* and H.Y. Hsieh, (2007)” Structural and passivative behaviors of Cu(In) thin film” J. Electro. Mater. 36 (2) 129-135 (SCI).

89

J.K. Hsiao, M.F. Tai, Y.C. Lee, C.Y. Yang, H.Y. Wang, H.M. Liu, J.S. Fang, and S.T. Chen, (2006) “Labelling of cultured macrophages with novel magnetic nanoparticles” J. Magn. Magn. Mater., 304, c4-c6.(SCI)

90

J.S. Fang*, T.P. Hsu, and G.S. Chen, (2006) “Crystallization and failure behavior of Ta-TM (TM = Fe, Co) nanostructured/amorphous diffusion barriers for copper metallization” J. Electro. Mater., 35 (1) 15-21.(SCI)

91

W.K. Wang, D.S. Wuu, W.C. Shih, J.S. Fang, C.E. Lee, W.Y. Lin, P. Han, R.H. Horng, T.C. Hsu, T.C. Huo, M.J. Jou, A. Lin and Y.H. Yu (2005) “Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Growm on Patterned Sapphire Substrates” J. J. Appl. Phys., 44(4) 2512-2515.(SCI)

92

D.S. Wuu, W.K. Wang, W.C. Shih, R.H. Horng, C.E. Lee, W.Y. Lin, and J.S. Fang (2005)”Enhanced output power of near-ultraviolet InGaN-GaN LEDs frown on patterned sapphire substrates”, IEEE Photon. Technol. Lett., 17(2) 288-290.(SCI)

93

J.S. FANG*, T.P. HSU and G.S. CHEN (2004), “Crystallization and failure behaviors of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization” J. Electro. Mater., 33(10) 1176-1181.(SCI)

94

J.S. Fang, G.S. Chen and Y.W. Lin (2004), “Phase transition behavior of reactive sputtering deposited Co-N thin films using transmission electron microscopy” J. Vac. Sci. Tech. A, 22(3) 698-704(SCI)

95

H.L.Chang, J.S. Fang and C.T. Kuo (2003), “Structures and properties of the crystalline Si-C-N using additional Si-source and Co-catalyst” Review on Advanced Materials Science vol 5, 432-439(SCI)

96

H.L.Chang, J.S. Fang and C.T. Kuo (2003), “Growth model of carbon nanotubes assisted with Co-based catalyst” Review on Advanced Materials Science, vol 5, 425-431(SCIE)

97

J.S Fang*, H.L. Chang, G.S. Chen, and P.Y. Lee (2003), “Crystallization and failure behaviors of Ta-Co nanostructured/amorphous diffusion barriers for copper metallization” Review on Advanced Materials Science, vol 5, 510-513.(SCIE)

98

J. S. Fang*, F.W. Tsai, and T.S. Chin, (2003), “Enhancement of [00l] Texture and Magnetoresistance of Sputtered La-Ca-Mn-O Thin Films on Silicon by Inserting Buffer Layers” Jpn. J. Appl. Phys., 42 1237-1241 (SCI)

99

G.S. Chen, J.J. Gua, C.K. Lin, C.S. Hsu, L.C. Yang, and J.S. Fang, (2002), “Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon” J.Vac. Surf. Tech., A 20(2) 479-485 (SCI)

100

J. S. Fang*, F.W. Tsai, and T.S. chin, (2002), “Highly Textured LaCaMnO Thin Films Grown on SiO/Si(100)”, Jpn. J. Appl. Phys., vol. 41, 600-605 (SCI)

101

J.S. Fang*, C.T. Chang, and T.S. Chin, (2001), “Electric properties of barium-strontium titanate thin films deposited by two-step radio-frequency sputtering”, J. Mater. Res., Vol. 16, No. 9 p.2680-2686. (SCI)

102

J.S. Fang, M.R. Jian, T.S. Chin, H.W. Zhang, B.G. Shen, (2000) “Magnetic Viscosity of NdFe₁₁TiNx Thin Films”, Jpn. J. Appl. Phys., vol. 39, p.496. (SCI)

103

J.C. Shih, T.S. Chin, C.A Chen, and J.S. Fang, (1999), “ The Effect of Beryllium Addition on Magnetostriction of the Tb_0.3Dy_0.7Fe₂ Alloy”, J Mag. and Mag. Mater., vol.191, p.101-106. (SCI)

104

J.S. Fang, T.S. Chin, J.C. Shih, C.A. Chen and S.W. Yung, (1999), \\\\\\\\{{data_intro_title}}quot; The ac-initial susceptibility as a measure of exchange coupling in two-phase nano-structured NdFeCuNbB magnet alloys, J Mag. and Mag. Mater., vol.195, p.588-594. (SCI)

105

J.S. Fang and T.S. Chin, (1999 ), \\\\\\\\{{data_intro_title}}quot; High Temperature c_ac Behaviors of Fe-Nd-B Nanocomposite Alloy, J. Journal of Material Science, (SCI)

106

J.S. Fang, M.S. Leu and T.S. Chin, (1998), “AC susceptibility of a two-phase nanocomposite Fe₈₈Nd₆B₆ alloy at 77-990 K”, J. Appl. Phys. Vol.83, p.3731. (SCI)

107

J. S. Fang, M.F. Hsieh, S.K. Chen and T.S. Chin, (1997), “Magnetic properties and structure of Nd-(Fe,B) nanocomposite alloys with fixed Fe/B ratio at 4~14”, J. J. Appl. Phys. vol.36, p.6324. (SCI)

108

T.S. Chin, F.M. Chen and J.S. Fang, (1997), “Magnetostrictive properties of Tb_0.3Dy_0.7(Fe_1-xV_x)₂ alloys”, IEEE Trans. on Magn., vol.33, p.3946. (SCI)

109

J.S. Fang, and T.S. Chin, (1996), “ Rapid thermal annealing of two phases nanocrystalline magnet alloys”, Materials Trans., JIM., vol.37, p.883. (SCI)

110

J.S. Fang, S.K. Chen and T.S. Chin, (1996), “ Nanocrystalline Nd₆Fe_88-xM_xB₆ (M= Ti or V) Magnets by rapid thermal annealing”, IEEE Trans. on Magn., vol.32, p.4401. (SCI) 

111

F.M. Chen, J.S. Fang and T.S. Chin, (1996), ” The effect of carbon on magnetostrictive properties of the Tb_0.3Dy_0.7Fe₂ alloy”, IEEE Trans. on Magn., vol.32, p.4776. (SCI) 

112

J.M. Yao, T.S. Chin, J.S. Fang and S.K. Chen, (1995), “ Magnetic aftereffect and magnetization process of nanocrystalline alpha-Fe/Nd₂Fe₁₄B two-phases magnet alloy”, IEEE Trans. on Magn., vol.31, p.3611. (SCI)

1

J.S. Fang(2023){{data_intro_title}}quot; Strengthening corrosion behavior of cobalt and ruthenium alloy films in an acidic electrolyte for nanoscale interconnect{{data_intro_title}}quot;, Thermec 2023 (AUT)

2

J.S. Fang(2023){{data_intro_title}}quot; Process Optimization of titanium Self-Aligned Silicide Formation through Evaluation of Sheet Resistance by Design of Experiment Methodology{{data_intro_title}}quot;, ICMCTF 2023 (USA)

3

J.S. Fang(2019)硫酸銨對電化學共沈積Cu(Mn)合金薄膜之特性,第十一屆海峽兩岸超微顆粒學術研討會(CHN)

4

J.S. Fang(2019){{data_intro_title}}quot;2 nm-thick Mn2O3 on nitrogen-stuffed p-SiOCH against Cu diffusion{{data_intro_title}}quot;,15th Coatings Science International 2019(NLD)

5

J.S. Fang(2018){{data_intro_title}}quot;Strengthening of porous low-k dielectric by nitrogen stuffing treatment and capping an ultrathin Mn barrier{{data_intro_title}}quot;,ANM 2018(PRT)

6

J.S. Fang(2018){{data_intro_title}}quot;Cu film fabrication via pulse underpotential deposition of Pb and surface-limited redox replacement of Cu on trenched Ru/SiO2/Si₂{{data_intro_title}}quot;,ISE 2018(LTU)

7

J.S. Fang(2018){{data_intro_title}}quot;Enhancement of Seeding for Electroless Cu Plating of Ta Thin-Film Electrodes by Using Alkyl Self-Assembled Monolayers{{data_intro_title}}quot;,ISE 2018(LTU)

8

J.S. Fang(2017){{data_intro_title}}quot;Fabricating high gap-filling Cu films on trenched Ru/p-SiOCH/Si Substrates using pulse Pb-UPDs{{data_intro_title}}quot;,ICASS 2017(CHN)

9

J.S. Fang(2017){{data_intro_title}}quot;Comparison of O2 Plasma Treatment on Porous Low Dielectric Constant Material in Sidewall and Bottom of Trench Structure{{data_intro_title}}quot;,ICASS 2017(CHN)

10

J.S. Fang(2017){{data_intro_title}}quot;Enhancement of catalyst growth for electroless Cu plating of TaN barrier layer: the role of alkyl self-assembled monolayer{{data_intro_title}}quot;,21st, ISE 2017(HUN)

11

J.S. Fang(2017){{data_intro_title}}quot;Sequentially layer-by-layer growth of Ag(Cu) thin film using underpotentially deposition and self-limited redox reaction”{{data_intro_title}}quot;,21th Topical ISE Meeting(HUN)

12

J.S. Fang(2017){{data_intro_title}}quot;Pore sealing of porous low-k dielectrics assisted by self-
assembled monolayers by 3-Aminopropyltrimethoxysilane treatment{{data_intro_title}}quot;,21st ISE 2017(HUN)

13

J.S. Fang(2017){{data_intro_title}}quot;Ethylenediamine improves layer-by-layer growth of Cu film prepared on cobalt-based substrate via electrochemical atomic layer
deposition{{data_intro_title}}quot;,SurfCoat Korea 2017 conference(KOR)

14

J.S. Fang(2016){{data_intro_title}}quot;Sequentially layer-by-layer growth of Cu film on patterned Ru/Si substrate{{data_intro_title}}quot;,Thermec 2016(AUT)

15

J.S. Fang(2015){{data_intro_title}}quot;Atomic Layer deposition of Cu and Cu(Ru) layer by electrochemical process{{data_intro_title}}quot;,The Advanced Materials World Congress(SWE)

16

J.S. Fang(2014){{data_intro_title}}quot;以電化學原子層沈積Cu-Ru薄膜{{data_intro_title}}quot;,兩岸薄膜科技研討會(CHN)

17

J.S. Fang(2014){{data_intro_title}}quot;Layer by layer growth of copper silver film using underpotential deposition by an electrochemical process{{data_intro_title}}quot;,SATF 2014(TUR)

18

J.S. Fang(2014){{data_intro_title}}quot;Phase formation and stability of Cu-Ge films with low electrical resistivity{{data_intro_title}}quot;,ThinFilm 2104(CHN)

19

J.S. Fang(2013){{data_intro_title}}quot;Thermal stability of Cu3Ge film prepared by magnetron co-sputtering using a copper target and a germanium target{{data_intro_title}}quot;,Thermec 2013(USA)

20

J.S. Fang(2013){{data_intro_title}}quot;Properties of co-sputtered AgGe and TaGe thin films{{data_intro_title}}quot;,兩岸工程材料會議(CHN西安)

21

方昭訓(2013){{data_intro_title}}quot;Cu(CoN) 與CoN顆粒薄膜應用於銅製程之特性{{data_intro_title}}quot;,第八屆海峽兩岸超微顆粒學術研討會(CHN吉首)

22

J.S. Fang(2013){{data_intro_title}}quot;Characteristics of plasma-treated amorphous Ta-Si-C film as a diffusion barrier for copper metallization,TMS 2013(USA)

23

J.S. Fang, Y.C. Lee, (2011) “Fe-Co-B-Nb High Entropy Thin Film for Copper Metallization”, EUROMAT in Montpellier (France)

24

鍾德儒¹ 柏方茹¹ 徐嘉禧¹ 方昭訓 “高能隙低電阻Mg摻雜AZO透明導電薄膜之特性” 第六屆海峽兩岸工程材料研討會, 南京 (2011)

25

Jau-Shiung Fang, Wu-Jia Su, Meng-Shuo Huang, Ting-Yi Lin, Chung-Shiun Chin “Characteristics of amorphous Ta-Si-C film as a diffusion barrier for copper metallization” ICETI 2011, Taipei

26

J.S. Fang* and Y.T. Chen “Passivation of copper-hafnium thin films using self-forming hafnium oxide” TACT 2011, Kenting, Taiwan

27

J.S. Fang^*, W.H. Luo, C.H. Hsu, J.C. Yang, and T.K. Tsai, (2011) “The Transparent Conductive Properties of Manganese-doped Zinc Oxide Films Deposited by Chemical Bath Deposition”, J. Electro. Mater. (Revised)

28

J.S. Fang, J.H. Lin, B.Y. Chen G.S. Chen and T.S. Chin, (2011) “Low-resistivity RuTaC barriers for Cu interconnects”, J. Electro. Mater. (Revised)

29

Jau-Shiung Fang, Chin-Fu Chiu, Ting-Yi Lin, Tsung-Shune Chin (2009)”Highly thermal-stable ultrathin Ta-Si-C amorphous film as a diffusion barrier for Cu interconnection”, THERMEC 2009 in Berlin (Germany)

30

謝維銘  楊仁傑  駱煒翔  徐嘉禧 方昭訓, (2008) “化學鍍浴沉積法製備ZnO薄膜之性質” 兩岸顆粒會議, 上海 (China).

31

J.S. Fang, Y.S. Lin, C.S. Cheng, Y.C. Lee and H.Y. Hsio (2007) “Enhancement of conductivity and transmittance of Al-doped ZnO thin films prepared by a metallic Zn:Al target” EUROMAT2007 in Nuremberg, (Germany).

32

J.S. Fang and H.C. Chen, (2007) “Preparation of the High-Quality Indium Zinc Oxide by Reactive Magnetron Co-sputtering Technique from Indium and Zinc Metallic Targets” TMS in Orlando (USA)

33

J.S. Fang and W.K. Cheng, (2006) “Evaluation of magnetoresistance characteristic of Co-Ti-O granular alloy thin films” Particulogy, Beijing (China).

34

J.S. Fang, T.P. Hsu and L.C. Yang, (2005) “Diffusion Barrier Properties of DC Sputtering Deposited Ta-Ni Films in Cu/SiO₂/Si Contact Schemes”, EUROMAT2005 in Prague (CZ)

35

J.S. Fang, M.L. Ker, and T.P. Hsu, (2005) “Thermal stability enhancement of sputtered Ta-Co-N diffusion barrier layer for copper metallization”, EUROMAT2005 in Prague (CZ)

36

Jau-Shiung Fang and Chen-Siang Hsu, (2005) “Designing experimental determination of sheet resistance of a submicron titanium self-aligned silicide formation”, TMS 2005 in San Francisco (USA)

37

方昭訓, 李安倫, 戴明鳳, (2004) “低溫燃燒合成製備Ni_xZn_1-xFe₂O₄(0.3 ≤ x ≤ 0.8) 鐵氧體粉末與特”,

The Chinese journal of Process Engineering, vol. 4, 212-217.

38

李安倫, 方昭訓, 戴明鳳, (2004) “燃燒法合成鐵鎳合金奈米粉末及包覆金的製程與特性”, The

Chinese journal of Process Engineering, vol. 4, 218-223.

39

 J.S. Fang, F.W. Tsai, and T.S. Chin, (2002) “ Highly [00l] Texture and CMR of Sputtered La-Ca-Mn-O

Thin Films on Silicon with Buffer Layers”, International Magnetism and Magnetic Materials

Conference. Amsterdam (The Netherlands)

40

M.S. Leu, J.S. Fang and T.S. Chin, (2001), “In-Situ Permeability Study of Nano-Crystalline Magnetic Alloys”, Chinese Physics Conference.

41

 J.M. Yao, J.S. Fang and T.S. Chin, (1996), “magnetization Reversal of Ti-modified Nd₂Fe₁₄B/a-Fe

 nanocomposite magnets”, International Conference on Rare Earth Permanent Magnets. p.409.

42

J.S. Fang, T.S. Chin and S.K. Chen, (1996), “Magnetic properties of nanocomposite Fe_88-xM_xNd₆B₆ magnets (M= Zr or Nb) by rapid thermal annealing” International Conference on Rare Earth Permanent Magnetsp.698.

1

方昭訓(2023) , "Characteristics of Al-Sc Intermetallic Compounds for next generation interconnects", 2023 材料年會,新竹市

2

方昭訓(2023) , "Properties of Ru-Al intermetallic compounds deposited by magnetron co-sputtering ", 2023 材料年會,新竹市

3

方昭訓(2023) , " Corrosion behavior of Co-Ru Alloy Thin Films Prepared by Electrochemical Codeposition on TiSi₂", 2023 TACT,Taipei

4

方昭訓(2023) , " Characteristics of Al-based intermetallic compounds as a next-generation interconnect material ", 2023 TACT,Taipei

5

方昭訓(2022) , "共濺鍍製備Al-Sc介金屬化合物薄膜製程之特性研究", 2022 材料年會,苗栗縣

6

方昭訓(2022) , "磁控共濺鍍沈積Ru-Al介金屬化合物之特性", 2022 材料年會,苗栗縣

7

方昭訓(2022) , "電化學沉積微量摻雜 Co(P)合金薄膜之結構", 2022 TACT,南投縣

8

方昭訓(2022) , "調控低電位沉積層狀製備下世代 Co(Ru)合金連導線薄膜", 2022 TACT,南投縣

9

方昭訓(2021) , " Nucleation Mechanism of Lightly-doped Co(C) Alloy Films Electrochemically Deposited by Mixing Co Electrolyte and Graphene ", 2021 材料年會,台北市

10

方昭訓(2021) , " Structural Change and Stress Variation of self-forming Cu(Sc) Films as an Interconnecting Material ", 2021 材料年會,台北市

11

方昭訓(2021) , " Improvement of electromigration reliability using a Sc-doped copper interconnects", 2021 材料年會,台北市

12

方昭訓(2021) , " Crystalline and electrical properties of phosphorous lightly-doped Co alloy films electrochemically deposited on Ni substrate for nanoscale interconnects", 2021 TACT,Taipei

13

方昭訓(2020) , "表面侷限氧化還原Ru置換低電位沉積Co單層製備CoRu合金薄膜特性", 2020中國機械學會年會,雲林縣

14

方昭訓(2020){{data_intro_title}}quot;共濺鍍製備 Cu(Sc)自形成擴散阻障層應用於銅製程之特性研究{{data_intro_title}}quot;,2020 材料年會,新北市

15

方昭訓(2020){{data_intro_title}}quot;調控Ru開路電位時間置換低電位沈積Co單層製備CoRu合金薄膜特性{{data_intro_title}}quot;,中國顆粒學會第十一屆學術年會暨海峽兩岸顆粒技術研討會,台北

16

方昭訓(2020){{data_intro_title}}quot;電化學共沈積微量摻雜鈷磷合金薄膜於金屬化製程之應用{{data_intro_title}}quot;,TACT 2020,台中

17

方昭訓(2019){{data_intro_title}}quot;Cu(Ru) Alloy Thin Films Prepared by Electrochemical Co- deposition{{data_intro_title}}quot;,2019 TACT,Taipei

方昭訓(2019){{data_intro_title}}quot;Cu(Mn) alloy thin film prepared by using Cu to replace underpotential deposited Mn through surface-limited redox replacement{{data_intro_title}}quot;,2019 TACT,Taipei

19

方昭訓(2019){{data_intro_title}}quot;Cu(Nd)自形成阻障層應用於銅連導線之特性{{data_intro_title}}quot;,2019 材料年會,台南

20

方昭訓(2019){{data_intro_title}}quot;電化學共沉積製備 Cu(Ru)合金薄膜之特性{{data_intro_title}}quot;,2019 材料年會,台南

21

方昭訓(2018){{data_intro_title}}quot;銅離子置換低電位沉積鈷原子層製備銅鈷合金薄膜特性{{data_intro_title}}quot;,2018 材料年會,台中

22

方昭訓(2018){{data_intro_title}}quot;電化學共沉積 Cu(Mn)合金薄膜之特性{{data_intro_title}}quot;,2018 材料年會,台中

23

方昭訓(2017){{data_intro_title}}quot;Effect of Cleaning solution on Electrical Characteristics and Reliability of Dense and Porous Low Dielectric Constant{{data_intro_title}}quot;,TACT 2017,Hualian

24

方昭訓(2017){{data_intro_title}}quot;Use of pulse Pb-UPD to fabricate high gap-filling Cu film on trenched
Ru/SiO2/Si by EC-ALD{{data_intro_title}}quot;,TACT 2017,Hualian

25

方昭訓(2017){{data_intro_title}}quot;Effect of O2 Plasma Treatment on Cu Diffusion Characteristics of Porous Low Dielectric Constant Material{{data_intro_title}}quot;,TACT 2017,Hualian

26

方昭訓(2017){{data_intro_title}}quot;pH value affecting the growth of copper layer by EC-ALD on Cobalt{{data_intro_title}}quot;,TACT 2017,Hualian

27

方昭訓(2016){{data_intro_title}}quot;電化學原子層沉積製備銀銅薄膜之特性探討{{data_intro_title}}quot;,2016 材料年會,HsinChu

28

方昭訓(2016){{data_intro_title}}quot;以電化學原子層沉積圖案化 Cu(Mn)薄膜{{data_intro_title}}quot;,2016 材料年會,Hsinchu

29

方昭訓(2015){{data_intro_title}}quot;以電化學原子層沉積Cu 薄膜在圖案化基板上的研究{{data_intro_title}}quot;,2015 材料年會,高雄

30

方昭訓(2015){{data_intro_title}}quot;Electrical and optical properties of bandgap-enlarged Mg-AZO films{{data_intro_title}}quot;,TACT 2015,Tainan

31

方昭訓(2015){{data_intro_title}}quot;Properties of Cu Thin Film on Pattern Substrates by Electrochemical
Atomic Layer Deposition{{data_intro_title}}quot;,兩岸薄膜科技會議,Tainan

32

方昭訓(2014){{data_intro_title}}quot;Structural, Electrical, and Resistance Force Characteristics of Ga-In-Sn Eutectic Alloys{{data_intro_title}}quot;,2014 ICETT,NanTou

33

方昭訓(2014){{data_intro_title}}quot;以電化學原子層沈積銅薄膜{{data_intro_title}}quot;,第九屆海峽兩岸工程材料研討會,Tainan

34

方昭訓(2014){{data_intro_title}}quot;Characteristics of Cu Thin Film prepared by Electrochemical Atomic Layer Deposition{{data_intro_title}}quot;,TACT 2014,Miaoli

35

方昭訓(2014){{data_intro_title}}quot;Hydrophobic and oleophobic properties of fluorocarbon films grown with C3F8/C4F8 and C2H2 containing HMDSO/Ar{{data_intro_title}}quot;,VASSCAA-7,Hsinchu

36

方昭訓(2013){{data_intro_title}}quot;High hydrophobic fluorocarbon films prepared using C3F8 and C2H2
precursors{{data_intro_title}}quot;,TACT 2013,Taipei

37

方昭訓(2012){{data_intro_title}}quot;RuO2擴散阻礙層與同連導線製程特性探討{{data_intro_title}}quot;,材料年會,Huwei

38

方昭訓(2012){{data_intro_title}}quot;濺鍍法製備Ag-Ge及Ta-Ge之特性{{data_intro_title}}quot;,TVS-2012,Taichung

39

黃孟碩、王漢瑜、方昭訓 (211) “雙層超薄Ru/Ta-Si-C擴散阻障層與銅連導線製程特性探討” Annual Conference of Taiwan Vacuum Society. Hsinchu, Taiwan

40

蘇武加, 黃孟碩, 邱敬富, 林庭宜, 方昭訓, 金重勳 (2010) “電漿改質Ta-Si-C 薄膜特性與銅製程擴散阻礙層探討” Annual Conference of the Chinese Society for Material Science. 高雄

徐嘉禧, 駱煒翔, 鐘德儒, 方昭訓 (2009) ”探討DMAB濃度對ZnO化學鍍製備薄膜性質” Annual

Conference of the Chinese Society for Material Science.

42

王梓育, 方昭訓 (2009) ”Cu(CoN)合金薄膜之特性研究 ” Annual Conference of the Chinese Society for Material Science.

43

鍾德儒, 柏方茹, 徐嘉禧, 方昭訓 (2009) ”高能隙低電阻Mg 摻雜AZO 透明導電薄膜製備與性質” Annual Conference of the Chinese Society for Material Science.

44

 許銀驛, 柏方茹, 張詩沅, 鄭力綱, 邱敬富, 林庭誼, 方昭訓, 金重勳 (2009) ”5 nm Ta-Si-C薄膜特性與

銅製程整合” Annual Conference of the Chinese Society for Material Science.

45

 陳蓁慧, 洪士育, 林家輝, 方昭訓 (2009) ”超薄Ta-C-N薄膜特性與銅製程整合探討” Annual Conference of the Chinese Society for Material Science.

46

蘇武加, 林家輝, 許銀驛, 黃孟碩, 林庭誼, 方昭訓, 金重勳 (2009) ”電漿表面改質Ta-Si-C 三元合金薄膜之特性探討” Annual Conference of the Chinese Society for Material Science.

47

鄭博元, 許銀驛, 鄭力綱, 蘇武加, 邱敬富, 方昭訓, 金重勳 (2009) ”超薄(Ru-Ta)Si-C非晶質擴散阻障層與銅製程整合特性研究” 熱處理年會

48

陳蓁慧, 洪士育, 邱敬富, 方昭訓 (2009) ”超薄TaCN薄膜阻障層與銅製程整合特性探討” 熱處理年會

49

駱煒翔, 徐嘉禧, 楊仁傑,方昭訓 (2009) ”Mn:ZnO 透明導電氧化物與稀磁半導體薄膜之製備” 熱處理年會

50

 王梓育, 方昭訓 (2009) ”Cu(CoN)合金薄膜特性探討”真空年會

51

陳蓁慧, 洪士育, 邱敬富, 簡竹模, 方昭訓 (2009) ”3 nm Ta-C-N阻障層特性與銅製程整合”真空年會

52

陳佑慈, 周瑋祖, 蘇武加, 方昭訓(2008) ”自我鈍化型銅鉿合金薄膜抗氧化性及電性研究” Annual Conference of the Chinese Society for Material Science.

53

 黃智祥, 李逸群, 許禎祥, 方昭訓(2008) ”共濺鍍製備Cu_1-xHf_x薄膜擴散阻礙特性之研究” Annual Conference of the Chinese Society for Material Science.

54

林家輝, 邱敬富, 周暐祖, 方昭訓 (2008) ”Ru/NiSi/Si應用於銅接觸栓塞擴散阻障層之特性探討” Annual Conference of the Chinese Society for Material Science.

55

謝維銘, 楊仁傑, 駱煒翔, 徐嘉禧, 方昭訓 (2008) ”化學鍍浴沉積法製備ZnO薄膜之性質” Annual Conference of the Chinese Society for Material Science.

56

王梓育, 鍾德儒, 邱敬富, 李景恆, 方昭訓 (2008) ”In:AZO透明導電薄膜之製備與性質” Annual Conference of the Chinese Society for Material Science.

57

周暐祖, 簡竣毅, 許禎祥, 方昭訓(2008) ”自我鈍化型銅鎂合金薄膜電性及結構特性” Annual Conference of the Chinese Society for Material Science.

58

陳蓁慧, 鄭博元, 洪士育, 邱敬富, 林庭誼, 方昭訓, 楊立中, 金重勳(2008) ”Ta-Si-C阻障層特性探討”Annual Conference of the Chinese Society for Material Science.

59

詹媛婷, 張凱嵐, 鄭易承, 王漢瑜, 方昭訓 (2008) ”添加少量鑭元素之銀薄膜特性之研究” Annual Conference of the Chinese Society for Material Science.

60

駱煒翔, 楊仁傑, 謝維銘, 徐嘉禧, 方昭訓 (2008) ”化學鍍浴沉積製備ZnO透明導電薄膜之研製” Annual Meeting of TACT.

61

陳蓁慧, 洪士育, 鄭博元, 鄭力綱, 邱敬富, 林庭誼, 方昭訓, 金重勳 (2008) ”10 nm之Ta-Si-C阻障層特性與銅製程整合探討” Annual Meeting of TACT.

62

廖士運, 劉家瑋, 邱敬富, 方昭訓, 陳伯宜, 楊立中, 蘇孝農, 段安華, 葉冠成(2008) ”超薄AZO阻障層特性探討” Annual Meeting of TACT.

63

鄭博元, 陳蓁慧, 洪士育, 蘇武加, 邱敬富, 林庭誼, 方昭訓, 金重勳(2008) ”超薄Ta-Si-C非晶質薄膜之熱穩定性” Journal of Taiwan Society for Metal Heart Treatment.

邱敬富, 林家輝, 林庭誼, 方昭訓, 楊立中, 金重勳 (2007) ”超薄鉭矽化物銅製程阻障層特性探討” Annual Conference of the Chinese Society for Material Science.

65

 陳佑慈,李逸群, 詹媛婷, 方昭訓, 李景恆, 許禎祥(2007) ”自我鈍化型銅鉿合金薄膜抗氧化性及電性研究” Annual Conference of the Chinese Society for Material Science.

66

方昭訓, 陳慧津, 黃智祥, 李景恆, 許禎祥 (2007) ”熱處理對金屬靶製備氧化銦鋅薄膜性質之影響” Annual Conference of the Chinese Society for Material Science.

67

洪伯賢, 王梓育, 王珮茹, 賴麗娟, 邱敬富, 李景恆, 許楨祥, 方昭訓(2007) ”摻雜In之AZO透明導電薄膜性質” Annual Conference of the Chinese Society for Material Science.

68

徐永曄, 謝育倫, 邱敬富, 林家輝, 李景恒, 許禎祥, 方昭訓 (2007) ”微量摻雜鉿之鉭薄膜阻障層特性探討” Annual Conference of the Chinese Society for Material Science.

69

 J.S. Fang, M.L. Ker, H.C. Chen (2006) “Electrical characteristic and microstructure of ternary alloy Ta_xCo_yN_z thin films deposited by reactive sputtering”, Annual Conference of Taiwan Vacuum Society.

70

J.S. Fang,H.Y. Hsieh (2006) “自我鈍化型銅銦合金薄膜之固溶特性及電性之研究” Annual Conference of Taiwan Vacuum Society.

71

 L. -C. Yang, C. Y. Cheng, J. S. Fang, W. Z. Chang , G. S. Chen (2006)” Characterization of polycrystalline CuInSe₂ thin films deposited by sputtering and evaporation as a function of composition” Annual Conference of Taiwan Vacuum Society.

72

方昭訓,賴思宇 (2006) “鈷/氧化鈦顆粒合金多層薄膜的磁阻特性研究” Annual Conference of Taiwan Vacuum Society.

73

J.S. Fang, H. C. Chen (2006)” 氧化銦鋅(IZO)非晶質薄膜擴散阻礙特性與銅製程整合” Annual Conference of Taiwan Vacuum Society.

74

林雍舜, 鄭仲祥, 李逸群, 蕭欣儀, 陳慧津, 李景恆,方昭訓 (2006)”以Zn:Al金屬靶濺鍍沉積製備Al:ZnO薄膜之透明導電膜性質” Annual Conference of the Chinese Society for Material Science.

75

方昭訓, 陳慧津, 黃智祥, 楊立中, 李景恆 (2006)”金屬靶製備氧化銦鋅薄膜性質之影響” Annual Conference of the Chinese Society for Material Science.

76

方昭訓, 柯銘禮, 陳慧津(2006)” 利用Ta-Co-N作為銅製程擴散阻礙層之研究” Annual Conference of the Chinese Society for Material Science.

77

林家輝, 陳枝政, 黃文良, 戴穎蓁, 陳慧津, 方昭訓,李景恆 (2006)”鎳矽化物銅製程阻障層之特性探討” Annual Conference of the Chinese Society for Material Science.

78

紀宗佑, 廖敬期, 陳慧津, 李景恆, 方昭訓 (2006)”離子束濺鍍與磁控濺鍍製備Ta擴散阻礙層與銅製程之特性” Annual Conference of the Chinese Society for Material Scienc.

李岳修, 方昭訓, 楊立中(2006)”射頻交流磁控濺鍍ZnO:Al透明導電薄膜之材料特性與研究” Annual Conference of the Chinese Society for Material Science.

80

方昭訓, 賴思宇, 陳佑慈, 李景恆(2006)”不連續Co/TiO2顆粒合金多層薄膜的磁阻特性” Annual Conference of the Chinese Society for Material Science.

81

李彥佑, 陳苡諺,賴思宇,李景恆,方昭訓(2006)”氧化銦絕緣層之製備與穿隧磁阻特性: Annual Conference of the Chinese Society for Material Science.

82

J.S. Fang, M.L. Ker, and T.P. Hsu (2005),” Phase formation and microstructure of amorphous Ta-Co-N thin films on Si substrates”, Annual Conference of the Chinese Society for Material Science.

83

 J.S. Fang, H.Y. Hsieh (2005),” Structural and passivative behaviors of Cu(In) thin film” Annual Conference of the Chinese Society for Material Science.

84

JS. Fang, T.P. Hsu, C.H. Hsu and G.S. Chen, (2004) ” Crystallization and failure behaviors of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization” Annual Conference of the Chinese Society for Material Science.

85

 C.M. Zheng, S.H. Zend, J.Y. Zhang, J.L. Zhang, J.W. Lin, Y.R. Li, T.P. Hsu, C.S. Hsu and J.S. Fang, (2004) “Diffusion barrier characteristics of amorphous Ta50Fe50 thin film prepared by a DC sputtering method”, Annual Conference of the Chinese Society for Material Science.

86

T.H. Hsu, S.C. Zhang, P.J. Chen, B.Y. Chen, T.P. Hsu, C.S. Hsu and J.S. Fang, (2004) “ Diffusion barrier properties of amorphous Ta-Co thin film for copper metalization”, Annual Conference of the Chinese Society for Material Science.

87

方昭訓, 曾王坡, 許藻錶, (2003) “Crystallization and failure behaviors of Ta-Co nanostructured/amorphous diffusion barriers for copper metallization”材料年會論文集.

88

 方昭訓 “Evaluation of Sheet Resistance for 0.30 mm Titanium Self-Aligned Silicide Process by Design of Experimental Method” 材料年會論文集 (2002)

89

方昭訓、嚴楚才、王俊彬、林俊樺、陳錦山, (2001), “高溫現場沉積製作矽化鎳之熱穩定性”, 真空科技年會論文

90

方昭訓、嚴楚才、王俊彬、林俊樺、鍾松畛、徐麒欽、陳錦山, (2001), “高溫現場沉積生成矽化鎳之活化能” 材料年會論文集

91

J.S. Fang, M.F. Ch

1

2

Chao-hsun Fang, Lu-ming Liu Self-Aligned Metal Silicide Process for Integrated Circuits Republic of China Patent Invention No. 126310.

Patent Term: January 21, 2001 to January 25, 2019.

3

Lu-ming Liu, Chao-hsun Fang Method for Increasing the Effective Gate Length in a Self-Aligned Silicide Process Republic of China Patent Invention No. 131956.

Patent Term: May 1, 2001 to January 4, 2019.

4

Teng-chun Tsai, Chao-hsun Fang, Lu-ming Liu Self-Aligned Silicide Process for Preventing Gate and Source/Drain Bridging Republic of China Patent Invention No. 123062.

Patent Term: October 21, 2000 to July 2, 2019.

5

Chao-hsun Fang, Wen-yi Hsieh, Tsui-jung Yu Method for Forming a Barrier Layer and the Structure Formed Thereby People's Republic of China Patent ZL 00128530.0.

Patent Term: March 29, 2006 to November 22, 2020. (See Appendix 42 of the publications)

1

2

2009, TMS in San Francisco, U.S.A.

3

2008, EUROMAT in Nuremberg, Germany.

4

2008, Cross-Strait Particle Conference, Shanghai, China.

5

2007, ANSTO in Sidney, Australlia.

6

2007, TMS in Orlendo, U.S.A.

7

2006, Cross-Strait Particle Conference, Beijing, China.

8

2005, EUROMAT in Pargue, C.Z.

9

2005, TMS in San Francisco, U.S.A.

10

2004, Cross-Strait Particle Conference, Yantai, China.

11

2003, Nano in Crete, Greece.

12

2002, Intermag in Amsterdam, The Netherlands.

13

2000, IITC in San Francisco, U.S.A.

1

TACT Annual Meeting Paper Award – Honorable Mention (2007) ”Investigation of Ultra-thin Tantalum Silicide Diffusion Barrier Layers for Copper Metallization Processes” Annual Meeting of TACT

2

TACT Annual Meeting Paper Award – Honorable Mention (2008) ”Preparation of ZnO Transparent Conductive Thin Films by Chemical Bath Deposition” Annual Meeting of TACT

3

Taiwan Heat Treatment Society Annual Meeting Paper Award – Second Place (2008) ”Thermal Stability of Ultra-thin Ta-Si-C Amorphous Thin Films” Journal of Taiwan Society for Metal Heat Treatment

4

Taiwan Heat Treatment Society Annual Meeting Paper Award – Honorable Mention (2009) ”Study on the Integration Characteristics of Ultra-thin (Ru-Ta)Si-C Amorphous Diffusion Barrier Layers with Copper Metallization Processes” Journal of Taiwan Society for Metal Heat Treatment.